Hybrid micro-driver architectures having time multiplexing for driving displays

#The disclosure relates generally to a display system, and, more specifically, to hybrid micro-driver architectures having time multiplexing for driving micro LED displays.

#Display panels are utilized in a wide range of electronic devices. Common types of display panels include active matrix display panels where each pixel may be driven to display a data frame. High-resolution color display panels, such as computer displays, smart phones, and televisions, may use an active matrix display structure. An active matrix display of m×n display (e.g., pixel) elements may be addressed with m row lines and n column lines or a subset thereof. In conventional active matrix display technologies a switching device and storage device is located at every display element of the display. A display element may be a light emitting diode (LED) or other light emitting material. A storage device(s) (e.g., a capacitor or a data register) may be connected to each display (e.g., pixel) element, for example, to load a data signal therein (e.g., corresponding to the emission to be emitted from that display element). The switches in conventional displays are usually implemented through transistors made of deposited thin films, and thus are called thin film transistors (TFTs). A common semiconductor used for TFT integration is amorphous silicon (a-Si), which allows for large-area fabrication in a low temperature process. A main difference between a-Si TFT and a conventional silicon metal-oxide-semiconductor-field-effect-transistor (MOSFET) is lower electron mobility in a-Si due to the presence of electron traps. Another difference includes a larger threshold voltage shift. Low temperature polysilicon (LTPS) represents an alternative material that is used for TFT integration. LTPS TFTs have a higher mobility that a-Si TFTs, yet mobility is still lower than for MOSFETs.

#Systems and apparatuses for hybrid micro-driver architectures having time multiplexing for driving displays are described. In one embodiment, a display (e.g., hybrid display architecture) includes a backplane and a micro-driver circuitry that is coupled to the backplane. The backplane includes circuitry (e.g., sample and hold circuitry) for sampling and holding analog data and for time multiplexing analog data. In one example, select logic time multiplexes analog data in a current domain. The micro-driver circuitry includes at least a capacitor of a ramp generator for generating a ramp voltage based on the analog data of the backplane and drive circuitry to cause at least one emission pulse for emitting a display element. In one example, each emission pulse has a pulse width that is based on a slope of the ramp voltage.

#Embodiments are illustrated by way of example and not limitation in the Figures of the accompanying drawings:

#FIG. 1A is a block diagram of a hybrid micro-driver display architecture 1700, according to an embodiment.

#FIGS. 1B-1C are block diagrams illustrating different views of an additional backplane-driver design, according to an embodiment.

#In various embodiments, description is made with reference to figures. However, certain embodiments may be practiced without one or more of these specific details, or in combination with other known methods and configurations. In the following description, numerous specific details are set forth, such as specific configurations, dimensions and processes, etc., in order to provide a thorough understanding of the present disclosure. In other instances, well-known techniques and components have not been described in particular detail in order to not unnecessarily obscure the present disclosure. Reference throughout this specification to “one embodiment,” “an embodiment”, or the like means that a particular feature, structure, configuration, or characteristic described in connection with the embodiment is included in at least one embodiment of the disclosure. Thus, the appearances of the phrase “in one embodiment,” “in an embodiment”, or the like in various places throughout this specification are not necessarily referring to the same embodiment of the disclosure. Furthermore, the particular features, structures, configurations, or characteristics may be combined in any suitable manner in one or more embodiments.

#The terms “over,” “to,” “between,” and “on” as used herein may refer to a relative position of one layer with respect to other layers. One layer “over,” or “on” another layer or bonded “to” another layer may be directly in contact with the other layer or may have one or more intervening layers. One layer “between” layers may be directly in contact with the layers or may have one or more intervening layers.

#The term “ON” as used in this specification in connection with a device state refers to an activated state of the device, and the term “OFF” refers to a de-activated state of the device. The term “ON” as used herein in connection with a signal received by a device refers to a signal that activates the device, and the term “OFF” used in this connection refers to a signal that de-activates the device. A device may be activated by a high voltage or a low voltage, depending on the underlying electronics implementing the device. For example, a PMOS transistor device is activated by a low voltage while a NMOS transistor device is activated by a high voltage. Thus, it should be understood that an “ON” voltage for a PMOS transistor device and a NMOS transistor device correspond to opposite (low vs. high) voltage levels. It is also to be understood that where Vdd and Vss is illustrated or described, it can also indicate one or more Vdd and/or Vss. For example, a digital Vdd for can be used for data input, digital logic, memory devices, etc., while another Vdd is used for driving the LED output block.