Electronic device including semiconductor memory having different distances between switching elements and variable resistance elements

An electronic device comprising a semiconductor memory, wherein the semiconductor memory comprises:

• a first variable resistance element;
• a first switching element coupled to the first variable resistance element via a first line;
• a second variable resistance element;
• and
• a second switching element coupled to the second variable resistance element via a second line,
• wherein a distance of electrical path between the first switching element and the first variable resistance element is larger than a distance of electrical path between the second switching element and the second variable resistance element,
• wherein a second path from a first terminal of the second switching element to the second variable resistance element includes a resistance component, a resistance of the second path being greater than a resistance of a first path, the first path being from a first terminal of the first switching element to the first variable resistance element,
• wherein the first switching element includes a first transistor having a first junction region corresponding to the first terminal of the first switching element,
• wherein the second switching element includes a second transistor having a first junction region corresponding to the first terminal of the second switching element, and
• wherein a number of first contact plugs disposed over and coupled to the first junction region of the first transistor is greater than a number of second contact plugs disposed over and coupled to the first junction region of the second transistor.

An electronic device comprising a semiconductor memory, wherein the semiconductor memory comprises:

• a first variable resistance element;
• a first switching element coupled to the first variable resistance element via a first line;
• a second variable resistance element;
• and
• a second switching element coupled to the second variable resistance element via a second line,
• wherein a distance of electrical path between the first switching element and the first variable resistance element is larger than a distance of electrical path between the second switching element and the second variable resistance element,
• wherein a second path from a first terminal of the second switching element to the second variable resistance element includes a resistance component, a resistance of the second path being greater than a resistance of a first path, the first path being from a first terminal of the first switching element to the first variable resistance element,
• wherein the first switching element includes a first transistor having a first junction region corresponding to the first terminal of the first switching element,
• wherein the second switching element includes a second transistor having a first junction region corresponding to the first terminal of the second switching element, and
• wherein a volume of a first contact plug disposed over and coupled to the first junction region of the first transistor is larger than a volume of a second contact plug disposed over and coupled to the first junction region of the second transistor.