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US 10,649,328 B2Granted
Pre-patterned lithography templates, processes based on radiation patterning using the templates and processes to form the templates
AssigneeInpria Corporation
InventorsJason K. Stowers, Andrew Grenville
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Abstract
High etch contrast materials provide the basis for using pre-patterned template structure with a template hardmask having periodic holes and filler within the holes that provides the basis for rapidly obtaining high resolution patterns guided by the template and high etch contrast resist. Methods are described for performing the radiation lithography, e.g., EUV radiation lithography, using the pre-patterned templates. Also, methods are described for forming the templates. The materials for forming the templates are described.
Claims25
A method for patterning features on a substrate, the process comprising:
- exposing a radiation sensitive layer on a structure to selectively patterned radiation, wherein the structure comprises the radiation sensitive layer on a pre-patterned template structure comprising a fill material within periodically patterned spaced apart holes through a single layer of template hardmask material surrounding the holes on an unpatterned buffer hardmask layer coating a surface of the substrate and having an average thickness from about 2 nm to about 250 nm, wherein the radiation sensitive layer is exposed by the selectively patterned radiation to form an exposed radiation sensitive layer with a latent image within the radiation sensitive layer, wherein the buffer hardmask layer has a different composition from the substrate allowing for differential etching of the buffer hardmask layer relative to the substrate and wherein the template hardmask material comprises silicon oxide, titanium nitride, tantalum nitride, or silicon nitride, wherein the fill material comprises a carbon rich composition or wherein the template hardmask material comprises titanium nitride, tantalum nitride, or silicon nitride, wherein the fill material comprises a carbon rich composition or silica glass composition to maintain differential etching, and wherein the fill material is approximately level with the surface of the template hardmask material;
- developing the exposed radiation sensitive layer to form a patterned structure with a patterned layer based on the latent image;
- and
- etching the patterned structure to selectively remove fill material susceptible to the etching process due to overlap of holes through the patterned layer with the fill material to expose the portion of the surface of the substrate under the hole.
1 more element
A method for forming a pre-patterned template structure, the method comprising:
- exposing a radiation sensitive layer to a periodic radiation pattern, wherein the radiation sensitive layer is on a surface of a compositionally layered stack, and wherein the compositionally layered stack comprises a substrate with a surface, an unpatterned buffer hardmask layer on the surface of the substrate and a single layer of template hardmask material on the buffer hardmask layer opposite the substrate, wherein the radiation sensitive layer, the unpatterned buffer hardmask layer and the template hardmask material have differential etching properties, wherein the unpatterned buffer hardmask layer has an average thickness from about 2 nm to about 250 nm wherein the unpatterned buffer hardmask layer comprises titanium nitride, tantalum nitride, silicon nitride, silicon oxide or combinations thereof and wherein the unpatterned buffer hardmask material is not the same as either the template hardmask material or the substrate material;
- developing the radiation sensitive layer following exposure to form a patterned exposed structure;
- etching the patterned exposed structure to form a periodic patterned template material with holes through the template hardmask material that surround the holes on all sides;
- and
- depositing filler material within holes through the periodic patterned template material, wherein the filler material has differential etching properties relative to the unpatterned buffer hardmask layer and the template hardmask material.
2 more elements
Dependencies are inferred from the claim text.