Pixel structure
AssigneeHannstar Display Corp.
InventorMu-Kai Kang
Life of this patent
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Abstract
A pixel structure includes a substrate, a thin film transistor and a common electrode. The thin film transistor is disposed on the substrate, wherein a semiconductive active layer of the thin film transistor has a channel region disposed between a source and a drain, the channel region includes a main channel region and at least one sub channel region, a channel length of the main channel region is less than a channel length of the at least one sub channel region, and the channel length of the main channel region is equal to a minimum of a channel length of the channel region. The common electrode is disposed on the thin film transistor, and the common electrode overlaps at least a portion of the at least one sub channel region, wherein the common electrode has an opening exposing the main channel region.
Claims22
A pixel structure, comprising:
- a substrate having a surface;
- a thin film transistor disposed on the surface of the substrate, the thin film transistor comprising a gate, a source, a drain, a gate insulating layer and a semiconductive active layer, wherein the gate, the source and the drain respectively overlap a portion of the semiconductive active layer in a direction perpendicular to the surface, the gate insulating layer is disposed between the gate and the semiconductive active layer, the semiconductive active layer has a channel region disposed between the source and the drain, the channel region comprises a main channel region and at least one sub channel region, a channel length of the main channel region is less than a channel length of the at least one sub channel region, and the channel length of the main channel region is equal to a minimum of a channel length of the channel region, wherein the channel length of the channel region is a distance of the channel region from the drain to the source;
- and
- a common electrode disposed on the thin film transistor, the common electrode overlapping at least a portion of the at least one sub channel region, wherein the common electrode has an opening exposing the main channel region.
A the pixel structure, comprising:
- a first substrate having a surface;
- a thin film transistor disposed on the surface of the first substrate, the thin film transistor comprising a gate, a source, a drain, a gate insulating layer and a semiconductive active layer, wherein the gate, the source and the drain overlap a portion of the semiconductive active layer in a direction perpendicular to the surface respectively, the gate insulating layer is disposed between the gate and the semiconductive active layer, the semiconductive active layer has a channel region disposed between the source and the drain, the channel region comprises a main channel region and at least one sub channel region, a channel length of the main channel region is less than a channel length of the at least one sub channel region, and the channel length of the main channel region is equal to a minimum of a channel length of the channel region, wherein the channel length of the channel region is referred to a distance of the channel region from the drain to the source;
- a first transparent conductive layer disposed on the thin film transistor, the first transparent conductive layer covering at least a portion of the at least one sub channel region, wherein the first transparent conductive layer has an opening exposing the main channel region;
- a second substrate disposed on the surface of the first substrate;
- and
- a liquid crystal layer disposed between the first substrate and the second substrate.
Dependencies are inferred from the claim text.