Liquid crystal display panel and liquid crystal display device
AssigneeShenzhen China Star Optoelectronics Technology Co., Ltd.
InventorYue Wu
Life of this patent
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Abstract
Provided is a liquid crystal display panel and a liquid crystal display device. The liquid crystal display panel includes a substrate and a thin film transistor formed on the substrate, wherein a source and a drain of the thin film transistor have complementary V-shaped structures, so as to form a V-shaped space region between the source and the drain, such that when the thin film transistor is in operation, a V-shaped conductive channel is formed in a semiconductor layer of the thin film transistor. An activation current of the thin film transistor can be increased.
Claims12
A liquid crystal display panel, comprising a substrate and a thin film transistor formed on the substrate, wherein a source and a drain of the thin film transistor have complementary V-shaped structures, so as to form a V-shaped space region between the source and the drain;
- such that when the thin film transistor is in operation, a V-shaped conductive channel is formed in a semiconductor layer of the thin film transistor;
- wherein, the V-shaped structure of the source is concave, and the V-shaped structure of the drain is convex;
- wherein, the semiconductor layer has a larger area than the V-shaped space region;
- wherein, the semiconductor layer has a V-shaped structure, which is in a same direction as the V-shaped space region and has a larger length than the V-shaped space region;
- wherein, a gate of the thin film transistor has a larger area than the semiconductor layer;
- wherein, the gate has a V-shaped structure, which is in a same direction as the V-shaped space region and has a larger length than the semiconductor layer.
A liquid crystal display device, comprising a liquid crystal display panel, which includes a substrate and a thin film transistor formed on the substrate, wherein a source and a drain of the thin film transistor are complementary V-shaped structures, so as to form a V-shaped space region between the source and the drain, such that when the thin film transistor is in operation, a V-shaped conductive channel is formed in a semiconductor layer of the thin film transistor;
- wherein, the V-shaped structure of the source is concave, and the V-shaped structure of the drain is convex;
- wherein the semiconductor layer has a larger area than the V-shaped space region;
- wherein the semiconductor layer has a V-shaped structure, which is in a same direction as the V-shaped space region and has a larger length than the V-shaped space region;
- wherein a gate of the thin film transistor has a larger area than the semiconductor layer;
- wherein the gate has a V-shaped structure, which is in a same direction as the V-shaped space region and has a larger length than the semiconductor layer.
Dependencies are inferred from the claim text.