Array substrate and method for manufacturing the same, display panel and display apparatus

An array substrate, divided into a through-hole region, a peripheral wiring region and an effective display region, comprising a gate layer, a gate insulation layer, a source-drain layer, a first passivation layer, and an ITO layer successively formed on a base substrate, wherein

• the array substrate further comprises a first through hole in the first passivation layer and a second through hole in the gate insulation layer, and a second passivation layer;
• and a part of the second passivation layer is arranged in the first and second through holes to cover a part of the ITO layer in the first through hole and the second through hole;
• wherein the through-hole region comprises a first through-hole sub-region and a second through-hole sub-region,
• the first through-hole sub-region is provided with the gate layer, the gate insulation layer, the source-drain layer and the first passivation layer successively formed on the base substrate, the ITO layer formed on the first passivation layer and in the first through hole, and the second passivation layer formed on the ITO layer in the first through hole;
• the second through-hole sub-region is provided with the gate layer, the gate insulation layer, the ITO layer formed on the gate insulation layer and in the second through hole, and the second passivation layer formed on the ITO layer in the second through hole;
• and
• wherein a thickness of the second passivation layer is less than that of the first passivation layer.

A method for manufacturing an array substrate, the array substrate being divided into a through-hole region, a peripheral wiring region and an effective display region, and the method comprising steps of forming a gate layer, a gate insulation layer, a source-drain layer, a first passivation layer and an ITO layer successively on a base substrate such that the ITO layer is provided in a first through hole in the first passivation layer and a second through hole in the gate insulation layer,

• the method further comprises steps of:
• forming a second passivation layer on the ITO layer after forming the ITO layer and before further performing a patterning process on the ITO layer, forming a photoresist layer on the second passivation layer, and performing an exposure and development process on the photoresist layer using a halftone mask such that a part of the photoresist layer, corresponding to the first and second through holes at the through-hole region, is completely retained, a part of the photoresist layer, corresponding to a part of the ITO layer at the effective display region which will be etched out, is completely removed, and a part of the photoresist layer, corresponding to a part of the ITO layer which will not be etched out at the effective display region, and a part of the ITO layer at the through-hole region except the first and second through holes, is thinned;
• performing a first etching on the second passivation layer to expose the part of the ITO layer at the effective display area which will be etched out;
• performing an ashing process on the photoresist layer to remove the photoresist layer at the effective display region and the photoresist layer at the through-hole region except the first and second through holes, and then performing an etching process on an exposed part of the ITO layer to form a pattern of the ITO layer;
• performing a second etching on the second passivation layer to completely remove the part of the second passivation layer at the through-hole region except the first and second through holes and at the effective display region at which the part of the ITO layer will not be etched out;
• and
• peeling off the photoresist layer.