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US 10,649,140 B1Granted
Back-end-of-line blocking structures arranged over a waveguide core
AssigneeGlobalfoundries Inc.
InventorsYusheng Bian, Ajey Poovannummoottil Jacob, Abu Thomas
Life of this patent
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Abstract
Structures including a waveguide core and methods of fabricating a structure including a waveguide core. A back-end-of-line interconnect structure includes a cap layer, an interlayer dielectric layer, and one or more metal features embedded in the interlayer dielectric layer. The interlayer dielectric layer is stacked in a vertical direction with the cap layer. The one or more metal features have an overlapping arrangement in a lateral direction with the waveguide core, which is arranged under the back-end-of-line interconnect structure.
Claims19
A structure comprising:
- a semiconductor substrate;
- a waveguide core comprised of a dielectric material;
- and
- a back-end-of-line interconnect structure including a first cap layer, a first interlayer dielectric layer, and a first metal feature extending partially through the first interlayer dielectric layer, the first interlayer dielectric layer and the first cap layer positioned in a vertical direction relative to the waveguide core, and the first metal feature having a first overlapping arrangement in a lateral direction with the waveguide core,
- wherein a portion of the first interlayer dielectric layer is located between the first metal feature and the waveguide core, and the waveguide core is positioned in the vertical direction between the back-end-of-line interconnect structure and the semiconductor substrate.
2 more elements
A method comprising:
- patterning a waveguide core from a dielectric layer;
- depositing a first interlayer dielectric layer of a back-end-of-line interconnect structure;
- patterning a trench extending partially through the first interlayer dielectric layer;
- depositing a metal in the trench to form a first metal feature;
- and
- depositing a first cap layer that is stacked in a vertical direction in the back-end-of-line interconnect structure with the first interlayer dielectric layer,
- wherein the first metal feature has a first overlapping arrangement in a lateral direction with the waveguide core, and a portion of the first interlayer dielectric layer is located between the first metal feature and the waveguide core.
4 more elements
Dependencies are inferred from the claim text.