Back to results
US 10,649,043 B2Granted
Magnetic field sensor device configured to sense with high precision and low jitter
AssigneeInfineon Technologies AG
InventorWolfgang Raberg
Life of this patent
Estimating the term…
Abstract
Magnetic field sensor devices and associated methods are disclosed. Magnetic field sensor devices may comprise a first magnetic field sensor having a first bridge part spatially separated from a second bridge part. In some implementations, a second magnetic field sensor may be arranged between the first bridge part and the second bridge part. With this arrangement, measurements read by the magnetic field sensor device have high precision and low jitter.
Claims11
A magnetic field sensor device, comprising:
- a first magnetic field sensor, the first magnetic field sensor comprising a first bridge circuit, a first bridge part of the first bridge circuit being spatially separate from a second bridge part of the first bridge circuit, the spatially separate first and second bridge parts with a spacing therebetween forming the first bridge circuit, and wherein the first bridge circuit comprises resistors based on a first transfer function that indicates a resistance of the resistors, and
- a second magnetic field sensor, wherein the second magnetic field sensor is arranged spatially entirely in the spacing between the first bridge part and the second bridge part of the first bridge circuit, wherein the second magnetic field sensor comprises a second bridge circuit, wherein the second bridge circuit comprises a first resistor based on a second transfer function coupled in series with a second resistor based on a third transfer function different from the second transfer function, and a third resistor based on the third transfer function coupled in series with a fourth resistor based on the second transfer function, the series connection of the first and second resistors being coupled in parallel to the series connection of the third and fourth resistors, and wherein the first resistor, the second resistor, the third resistor, and the fourth resistor each exhibit at least one of a giant magnetoresistance and a tunnel magnetoresistance.
A magnetic field sensor device, comprising:
- a first magnetic field sensor comprising a first bridge circuit having a first bridge part comprising first and fourth resistor elements, and a second bridge part comprising second and third resistor elements, wherein the first bridge part and the second bridge part are spatially separate from one another with a spacing therebetween, and wherein the first through fourth resistor elements comprise a same design based on a same transfer function that indicates a resistance of the first through fourth resistor elements;
- and
- a second magnetic field sensor comprising a second bridge circuit entirely disposed in the spacing between the first bridge part and the second bridge part of the first bridge circuit of the first magnetic field sensor, wherein the first and fourth resistor elements are disposed on one side of the second magnetic field sensor, and the second and third resistor elements are disposed on a second, opposing side of the at least a portion of the second magnetic field sensor, wherein the second bridge circuit comprises fifth through eighth resistors each exhibiting at least one of a giant magnetoresistance and a tunnel magnetoresistance, and wherein the fifth resistor and the eighth resistor have larger sensitivity ranges than the sixth resistor and the seventh resistor.
Dependencies are inferred from the claim text.