Power transistor, driver and output stage including an active region, a metallization level, and a further metallization level

A power transistor, comprising:

• an active region;
• a metallization level located above the active region for power distribution and for detecting an imminent metallization error induced by RPP stress caused by repeated power pulses;
• and
• a further metallization level located above the metallization level in which galvanically isolated metal elements extend mutually parallel in a direction of extent, of which one pair is used for energizing the power transistor;
• wherein at least one cut-out is formed above the active region in the further metallization level,
• wherein except for at least one stepped feature that extends into the cutout, the cut-out is oval, circular, rectangular, rhombic or octagonal.

A driver having a power transistor, the power transistor comprising:

• an active region;
• a metallization level located above the active region for power distribution and for detecting an imminent metallization error induced by RPP stress caused by repeated power pulses;
• and
• a further metallization level including metal strips located above the metallization level in which galvanically isolated metal elements extend mutually parallel in a direction of extent, of which one pair is used for energizing the power transistor;
• wherein the metal strips each have a cut-out that is disposed above the active region and is located at an edge that faces the respective other metal strip.

An output stage for a vehicle component having a driver, the driver including a power transistor, the power transistor comprising:

• an active region;
• a metallization level located above the active region for power distribution and for detecting an imminent metallization error induced by RPP stress caused by repeated power pulses;
• and
• a further metallization level including metal strips located above the metallization level in which galvanically isolated metal elements extend mutually parallel in a direction of extent, of which one pair is used for energizing the power transistor;
• wherein the metal strips each have a cut-out that is disposed above the active region and is located at an edge that faces the respective other metal strip, and
• wherein the cut-out is proportional in size to a size of the output stage.