Silicon wafer

A silicon wafer comprising:

• a denuded zone which includes a surface of the silicon wafer and of which a density of vacancy-oxygen complexes which comprise complexes of vacancies and oxygen is less than 1.0×1012/cm3:
• an intermediate layer disposed inwardly, in a depth direction of the silicon wafer, of the denuded zone so as to be adjacent to the denuded zone, wherein the density of the vacancy-oxygen complexes in the intermediate layer increases gradually inwardly in the depth direction of the silicon wafer from a boundary with the denuded zone within a range of 1.0×1012/cm3 or over and less than 5.0×1012/cm3 the intermediate layer having a depth tI determined corresponding to a depth tDZ of the denuded zone;
• and
• a bulk layer disposed inwardly, in the depth direction of the silicon wafer, of the intermediate layer so as to be adjacent to the intermediate layer, wherein the density of the vacancy-oxygen complexes in the bulk layer is 5.0×1012/cm3 or over,
• wherein the depth tDZ of the denuded zone and the depth tI of the intermediate layer satisfy a relation:
• tI≤(2.6tDZ+64) μm if the depth tDZ of the denuded zone is 3 μm or over and less than 10 μm.

A silicon wafer comprising:

• a denuded zone which includes a surface of the silicon wafer and of which a density of vacancy-oxygen complexes which comprise complexes of vacancies and oxygen is less than 1.0×1012/cm3;
• an intermediate layer disposed inwardly, in a depth direction of the silicon wafer, of the denuded zone so as to be adjacent to the denuded zone, wherein the density of the vacancy-oxygen complexes in the intermediate layer increases gradually inwardly in the depth direction of the silicon wafer from a boundary with the denuded zone within a range of 1.0×1012/cm3 or over and less than 5.0×1012/cm3, the intermediate layer having a depth tI determined corresponding to a depth tDZ of the denuded zone;
• and
• a bulk layer disposed inwardly, in the depth direction of the silicon wafer, of the intermediate layer so as to be adjacent to the intermediate layer, wherein the density of the vacancy-oxygen complexes in the bulk layer is 5.0×1012/cm3 or over,
• wherein the depth tDZ of the denuded zone and the depth tI of the intermediate layer satisfy a relation:
• tI≤(0.3tDZ+87) μm if the depth tDZ of the denuded zone is 10 μm or over and less than 100 μm.