Etching reactants and plasma-free etching processes using the same
AssigneeL'Air Liquide, SociétéAnonyme pour l'Exploitation et l'Etude des Procédés Georges Claude
InventorsClément Lansalot-Matras, Jooho Lee, Jean-Marc Girard, Nicolas Blasco, Satoko Gatineau
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Abstract
Disclosed are processes of removing layers from substrates using fluorinated reactants having the formula MFx(adduct)n, wherein x ranges from 2 to 6 inclusive; n ranges from 0 to 5 inclusive; M is selected from the group consisting of P, Ti, Zr, Hf, V, Nb, Ta, Mo, and W; and the adduct is a neutral organic molecule selected from THF, dimethylether, diethylether, glyme, diglyme, triglyme, polyglyme, dimethylsulphide, diethylsulphide, or methylcyanide. The fluorinated reactants dry etch the nitride layers without utilizing any plasma.
Claims16
A method of removing layers from a substrate using a fluorinated reactant comprising the steps of:
- (a) introducing a vapor of the fluorinated reactant into a reactor having a substrate disposed therein, the substrate having a layer thereon, and (b) etching at least part of the layer from the substrate, the fluorinated reactant selected from the group consisting of VF5, NbF5, MoF6, NbF5(SEt), and NbF4(SEt)2.
A dry etching method for selectively etching a layer from a substrate by reacting a vapor of a fluorinated reactant with the layer to form volatile fluorinated species, the fluorinated reactant selected from the group consisting of VF5, NbF5, MoF6, NbF5(SEt), and NbF4(SEt)2.
Dependencies are inferred from the claim text.