Cleaning formulations
AssigneeVersum Materials US, LLC
InventorsSeiji Inaoka, William Jack Casteel, Jr., Wen Dar Liu
Life of this patent
Estimating the term…
Abstract
A composition and method for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes water, a fluoride ion source, an alkanolamine, sulfuric acid, and an organic acid. The compositions effectively remove the copper and cobalt-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials.
Claims21
A composition useful for removing residue from a semiconductor substrate, the composition comprising:
- from about 25% to about 80% by weight of water;
- from about 0.01% to about 5% by weight of a fluoride ion source, based on actives;
- from about 0.01% to about 10% by weight of sulfuric acid;
- from about 1% to about 50% by weight of an alkanolamine;
- from about 1% to about 25% by weight of an organic acid, from about 0.1% to about 15% by weight of a corrosion inhibitor selected from the group consisting of benzotriazole, o-tolyltriazole, m-tolyltriazole, p-tolyltriazole, carboxybenzotriazole, 1-hydroxybenzotriazole, nitrobenzotriazole and dihydroxypropylbenzotriazole, wherein the pH of the composition is from 7 to 9.
A composition useful for removing residue from a semiconductor substrate, the composition comprising:
- from about 25% to about 80% by weight of water;
- from about 0.01% to about 5% by weight of a source of fluoride ions, based on actives;
- from about 0.01% to about 10% by weight of sulfuric acid;
- from about 1% to about 50% by weight of an alkanolamine;
- from about 1% to about 25% by weight of an organic acid;
- and a water-miscible organic solvent.
A composition comprising:
- from about 5% to about 25% by weight of water;
- from about 10% to about 45% by weight of a water-miscible organic solvent selected from the group consisting of propylene glycol, glycerol, dimethylacetamide, tetrahydrofuryl alcohol, ethylene glycol, hexylene glycol, and mixtures thereof;
- from about 20% to about 30% by weight of at least one alkanolamine;
- from about 5% to about 15% by weight of HF (5% aqueous solution;
- from about 0.5% to about 2% by weight of an organic acid is selected from the group consisting of l-ascorbic acid, oxalic acid, malonic acid, citric acid, acetic acid, imiodiacetic acid, lactic acid, para-toluene sulfonic acid, gallic acid, and mixtures thereof;
- from about 1.5% to about 8% by weight of sulfuric acid;
- and about 0.1% of a triazole selected from the group consisting of benzotriazole, o-tolyltriazole, m-tolyltriazole, p-tolyltriazole, carboxybenzotriazole, 1-hydroxybenzotriazole, nitrobenzotriazole and dihydroxypropylbenzotriazole, wherein the composition has a pH of from about 7 to about 9.
A composition comprising:
- from about 50% to about 73% by weight of water;
- from about 20% to about 30% by weight of at least one alkanolamine;
- from about 5% to about 15% by weight of HF (5% aqueous solution;
- from about 0.5% to about 2% by weight of L-ascorbic acid;
- and from about 1.5% to about 8% by weight of sulfuric acid;
- and about 0.1% of a triazole selected from the group consisting of benzotriazole, o-tolyltriazole, m-tolyltriazole, p-tolyltriazole, carboxybenzotriazole, 1-hydroxybenzotriazole, nitrobenzotriazole and dihydroxypropylbenzotriazole, wherein the composition has a pH of from about 7 to about 9.
Dependencies are inferred from the claim text.