Chemical-mechanical polishing composition comprising benzotriazole derivatives as corrosion inhibitors
AssigneeBASF SE
InventorsRobert Reichardt, Martin Kaller, Michael Lauter, Yuzhuo Li, Andreas Klipp
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AssigneeBASF SE
InventorsRobert Reichardt, Martin Kaller, Michael Lauter, Yuzhuo Li, Andreas Klipp
Estimating the term…
A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.
A chemical-mechanical polishing (CMP) composition in the form of a ready to use slurry comprising:
Dependencies are inferred from the claim text.