Tungsten buff polishing compositions with improved topography
AssigneeCabot Microelectronics Corporation
InventorsKevin P. Dockery, Pankaj K. Singh, Steven Grumbine, Kim Long
Life of this patent
Estimating the term…
Abstract
The invention provides a chemical-mechanical polishing composition comprising a) surface-modified colloidal silica particles, comprising a negatively-charged group on the surface of the particles, wherein the surface-modified colloidal silica particles have a negative charge, a particle size of about 90 nm to about 350 nm, and a zeta potential of about −5 mV to about −35 mV at a pH of about 3, b) an iron compound, c) a stabilizing agent, d) a corrosion inhibitor, and e) an aqueous carrier. The invention also provides a method suitable for polishing a substrate.
Claims36
A chemical-mechanical polishing composition comprising:
- (a) surface-modified colloidal silica particles comprising a negatively-charged group on the surface of the particles, wherein the surface-modified colloidal silica particles have
- a negative charge,
- a particle size of about 90 nm to about 350 nm, and
- a zeta potential of about −5 mV to about −35 mV at a pH of about 3,
- (b) an iron compound,
- (c) a stabilizing agent,
- (d) a corrosion inhibitor, and
- (e) an aqueous carrier.
A method of chemically-mechanically polishing a substrate comprising:
- (i) providing a substrate;
- (ii) providing a polishing pad;
- (iii) providing a chemical-mechanical polishing composition comprising:
- (a) surface-modified colloidal silica particles comprising a negatively-charged group on the surface of the particles, wherein the surface-modified colloidal silica particles have
- a negative charge,
- a particle size of about 90 nm to about 350 nm, and
- a zeta potential of about −5 mV to about −35 mV at a of about 3,
- (b) an iron compound,
- (c) a stabilizing agent,
- (d) a corrosion inhibitor, and
- (e) an aqueous carrier;
- (iv) contacting the substrate with the polishing pad and the chemical mechanical polishing composition;
- and
- (v) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate to abrade at least a portion of a surface of the substrate to polish the substrate.
Dependencies are inferred from the claim text.