US 10,647,089 B2Granted

Conductive structure and electronic device comprising same

AssigneeLG Chem, Ltd.

InventorsSujin Kim, Pumsuk Park, Yong Chan Kim, Ki-Hwan Kim

Life of this patent

Estimating the term…

Abstract

The present specification provides a conductive structure body and an electronic device comprising the same.

Claims14

Dependent claims

A conductive structure body comprising:

a first dielectric layer comprising a first metal compound;
a second dielectric layer comprising a second metal compound provided to face the first dielectric layer;
and
a metal layer provided between the first dielectric layer and the second dielectric layer,
wherein the second metal compound comprises an oxide comprising at least one element selected from a group consisting of Nb, Zr, Y, Ta, La, V, Ti, Zn, Ni, B, Si, Al, In, and Sn,
wherein an average light transmittance of the conductive structure body is 80% or more for light having a wavelength of 550 nm, and
wherein the conductive structure body satisfies Equations 1 to 6 given below:
0.12
D
eff
+
(
1
-
0.06
k
eff
⁢
⁢
_
⁢
⁢
dielectric
)
+
(
1
-
0.98
(
d
·
k
eff
⁢
⁢
_
⁢
⁢
metal
)
)
≤
0.25
[
Equation
⁢
⁢
1
]
D
eff
=
n
eff
⁢
⁢
_
⁢
⁢
550
-
1
n
eff
⁢
⁢
_
⁢
⁢
380
-
n
eff
⁢
⁢
_
⁢
⁢
450
[
Equation
⁢
⁢
2
]
n
eff
⁢
⁢
_
⁢
⁢
dielectric
2
=
1
2
⁢
{
(
n
1
2
-
k
1
2
)
⁢
f
1
+
(
n
2
2
-
k
2
2
)
⁢
f
2
}
×
(
1
+
{
1
+
[
2
⁢
(
n
1
⁢
k
1
⁢
f
1
+
n
2
⁢
k
2
⁢
f
2
)
(
n
1
2
-
k
1
2
)
⁢
f
1
+
(
n
2
2
-
k
2
2
)
⁢
f
2
]
2
}
1
/
2
)
[
Equation
⁢
⁢
3
]
k
eff
⁢
⁢
_
⁢
⁢
dielectric
=
1
n
eff
⁢
⁢
_
⁢
⁢
dielectric
⁢
(
n
1
⁢
k
1
⁢
f
1
+
n
2
⁢
k
2
⁢
f
2
)
[
Equation
⁢
⁢
4
]
n
eff
⁢
⁢
_
⁢
⁢
metal
2
=
1
2
⁢
{
(
n
3
2
-
k
3
2
)
⁢
f
3
+
(
n
4
2
-
k
4
2
)
⁢
f
4
}
×
(
1
+
{
1
+
[
2
⁢
(
n
3
⁢
k
3
⁢
f
3
+
n
4
⁢
k
4
⁢
f
4
)
(
n
3
2
-
k
3
2
)
⁢
f
3
+
(
n
4
2
-
k
4
2
)
⁢
f
4
]
2
}
1
/
2
)
[
Equation
⁢
⁢
5
]
k
eff
⁢
⁢
_
⁢
⁢
metal
=
1
n
eff
⁢
⁢
_
⁢
⁢
metal
⁢
(
n
3
⁢
k
3
⁢
f
3
+
n
4
⁢
k
4
⁢
f
4
)
[
Equation
⁢
⁢
6
]
in Equation 1, Deff represents a dispersion of average refractive indexes of the first dielectric layer and the second dielectric layer obtained by Equations 2 and 3, keff_dielectric represents an average light extinction coefficient of the first dielectric layer and the second dielectric layer obtained by Equation 4, d represents a total thickness of the first dielectric layer, the second dielectric layer, and the metal layer, keff_metal represents the average light extinction coefficient of the first dielectric layer, the second dielectric layer, and the metal layer obtained by Equation 5,
in Equation 2, neff_550 represents the average refractive index of the first dielectric layer and the second dielectric layer obtained by Equation 3 for light having a wavelength of 550 nm, neff_450 represents the average refractive index of the first dielectric layer and the second dielectric layer obtained by the Equation 3 for light having a wavelength of 450 nm, and neff_380 represents the average refractive index of the first dielectric layer and the second dielectric layer obtained by Equation 3 for light having a wavelength of 380 nm,
in Equations 3 and 4, n1 represents a refractive index of the first dielectric layer, n2 represents the refractive index of the second dielectric layer, k1 represents the light extinction coefficient of the first dielectric layer, k2 represents the light extinction coefficient of the second dielectric layer, fi represents a thickness ratio of the first dielectric layer to the first dielectric layer and the second dielectric layer, and f2 represents the thickness ratio of the second dielectric layer to the first dielectric layer and the second dielectric layer,
in Equations 5 and 6, n3 represents an average refractive index neff_dielectric of the first dielectric layer and the second dielectric layer, n4 represents the refractive index of the metal layer, k3 represents the average light extinction coefficient keff_dielectric of the first dielectric layer and the second dielectric layer, k4 represents the light extinction coefficient of the metal layer, f3 represents the thickness ratio of the first dielectric layer and the second dielectric layer to the conductive structure body, and f4 represents the thickness ratio of the metal layer to the conductive structure body, and
each of the average light extinction coefficient keff_dielectric of the first dielectric layer and the second dielectric layer and the average light extinction coefficient keff_metal of the first dielectric layer, the second dielectric layer, and the metal layer is a value measured for light having a wavelength of 380 nm.

390 more elements

Dependencies are inferred from the claim text.

Facts

Application: 15/555,938Filed 16 Mar 2016
Priority: KR 10-2015-003611216 Mar 2015
Published: US 2018/0037004 A18 Feb 2018
Granted: 12 May 2020
Term ends: Not estimatedThe source records don’t support an estimate.

Classification12 codes

B32B 15/04
Layered products comprising a layer of metal: comprising metal as the main or only constituent of a layer, which is next to another layer of the…
H01B 1/02
Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors: mainly consisting of metals or alloys
H01B 3/10
Mainly consisting of inorganic substances: metallic oxides
H01B 5/14
Non-insulated conductors or conductive bodies characterised by their form: comprising conductive layers or films on insulating-supports

Family

US 2018/0037004 A1Pre-grant publication · published 8 Feb 2018
US 10,647,089 B2This patent

From the US filing history. Foreign family members aren’t listed.

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A conductive structure body comprising:

a first dielectric layer comprising a first metal compound;
a second dielectric layer comprising a second metal compound provided to face the first dielectric layer;
and
a metal layer provided between the first dielectric layer and the second dielectric layer,
wherein the second metal compound comprises an oxide comprising at least one element selected from a group consisting of Nb, Zr, Y, Ta, La, V, Ti, Zn, Ni, B, Si, Al, In, and Sn,
wherein an average light transmittance of the conductive structure body is 80% or more for light having a wavelength of 550 nm, and
wherein the conductive structure body satisfies Equations 1 to 6 given below:
0.12
D
eff
+
(
1
-
0.06
k
eff
⁢
⁢
_
⁢
⁢
dielectric
)
+
(
1
-
0.98
(
d
·
k
eff
⁢
⁢
_
⁢
⁢
metal
)
)
≤
0.25
[
Equation
⁢
⁢
1
]
D
eff
=
n
eff
⁢
⁢
_
⁢
⁢
550
-
1
n
eff
⁢
⁢
_
⁢
⁢
380
-
n
eff
⁢
⁢
_
⁢
⁢
450
[
Equation
⁢
⁢
2
]
n
eff
⁢
⁢
_
⁢
⁢
dielectric
2
=
1
2
⁢
{
(
n
1
2
-
k
1
2
)
⁢
f
1
+
(
n
2
2
-
k
2
2
)
⁢
f
2
}
×
(
1
+
{
1
+
[
2
⁢
(
n
1
⁢
k
1
⁢
f
1
+
n
2
⁢
k
2
⁢
f
2
)
(
n
1
2
-
k
1
2
)
⁢
f
1
+
(
n
2
2
-
k
2
2
)
⁢
f
2
]
2
}
1
/
2
)
[
Equation
⁢
⁢
3
]
k
eff
⁢
⁢
_
⁢
⁢
dielectric
=
1
n
eff
⁢
⁢
_
⁢
⁢
dielectric
⁢
(
n
1
⁢
k
1
⁢
f
1
+
n
2
⁢
k
2
⁢
f
2
)
[
Equation
⁢
⁢
4
]
n
eff
⁢
⁢
_
⁢
⁢
metal
2
=
1
2
⁢
{
(
n
3
2
-
k
3
2
)
⁢
f
3
+
(
n
4
2
-
k
4
2
)
⁢
f
4
}
×
(
1
+
{
1
+
[
2
⁢
(
n
3
⁢
k
3
⁢
f
3
+
n
4
⁢
k
4
⁢
f
4
)
(
n
3
2
-
k
3
2
)
⁢
f
3
+
(
n
4
2
-
k
4
2
)
⁢
f
4
]
2
}
1
/
2
)
[
Equation
⁢
⁢
5
]
k
eff
⁢
⁢
_
⁢
⁢
metal
=
1
n
eff
⁢
⁢
_
⁢
⁢
metal
⁢
(
n
3
⁢
k
3
⁢
f
3
+
n
4
⁢
k
4
⁢
f
4
)
[
Equation
⁢
⁢
6
]
in Equation 1, Deff represents a dispersion of average refractive indexes of the first dielectric layer and the second dielectric layer obtained by Equations 2 and 3, keff_dielectric represents an average light extinction coefficient of the first dielectric layer and the second dielectric layer obtained by Equation 4, d represents a total thickness of the first dielectric layer, the second dielectric layer, and the metal layer, keff_metal represents the average light extinction coefficient of the first dielectric layer, the second dielectric layer, and the metal layer obtained by Equation 5,
in Equation 2, neff_550 represents the average refractive index of the first dielectric layer and the second dielectric layer obtained by Equation 3 for light having a wavelength of 550 nm, neff_450 represents the average refractive index of the first dielectric layer and the second dielectric layer obtained by the Equation 3 for light having a wavelength of 450 nm, and neff_380 represents the average refractive index of the first dielectric layer and the second dielectric layer obtained by Equation 3 for light having a wavelength of 380 nm,
in Equations 3 and 4, n1 represents a refractive index of the first dielectric layer, n2 represents the refractive index of the second dielectric layer, k1 represents the light extinction coefficient of the first dielectric layer, k2 represents the light extinction coefficient of the second dielectric layer, fi represents a thickness ratio of the first dielectric layer to the first dielectric layer and the second dielectric layer, and f2 represents the thickness ratio of the second dielectric layer to the first dielectric layer and the second dielectric layer,
in Equations 5 and 6, n3 represents an average refractive index neff_dielectric of the first dielectric layer and the second dielectric layer, n4 represents the refractive index of the metal layer, k3 represents the average light extinction coefficient keff_dielectric of the first dielectric layer and the second dielectric layer, k4 represents the light extinction coefficient of the metal layer, f3 represents the thickness ratio of the first dielectric layer and the second dielectric layer to the conductive structure body, and f4 represents the thickness ratio of the metal layer to the conductive structure body, and
each of the average light extinction coefficient keff_dielectric of the first dielectric layer and the second dielectric layer and the average light extinction coefficient keff_metal of the first dielectric layer, the second dielectric layer, and the metal layer is a value measured for light having a wavelength of 380 nm.

390 more elements

Facts

Application

15/555,938Filed 16 Mar 2016

Priority

KR 10-2015-003611216 Mar 2015

Published

US 2018/0037004 A18 Feb 2018

Granted

12 May 2020

Term ends

Not estimatedThe source records don’t support an estimate.

Classification12 codes

B32B 15/04
Layered products comprising a layer of metal: comprising metal as the main or only constituent of a layer, which is next to another layer of the…
H01B 1/02
Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors: mainly consisting of metals or alloys
H01B 3/10
Mainly consisting of inorganic substances: metallic oxides
H01B 5/14
Non-insulated conductors or conductive bodies characterised by their form: comprising conductive layers or films on insulating-supports