Terahertz transistor
AssigneeArizona Board of Regents on Behalf of the University of Arizona
InventorChristopher K. Walker
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Abstract
Superconducting Meissner effect transistors, methods of modulating, and systems are disclosed. In one aspect a disclosed transistor includes a superconducting bridge between a first and a second current probe, the first and second current probe being electrically connected to a source and a drain electrical connection, respectively and a control line configured to emit a magnetic field signal having signal strength Hsig at the superconducting bridge. In one aspect the emitted magnetic field is configured to break Cooper pairs in the superconducting bridge.
Claims24
A superconducting Meissner effect transistor comprising:
- a superconducting bridge between a first and a second current probe, the first and second current probe being electrically connected to a source and a drain electrical connection, respectively, wherein the superconducting bridge includes a plurality of Cooper pairs having anti-parallel spins;
- a magnetic field bias, wherein a strength of the magnetic field bias at the superconducting bridge (Ha) is less than or equal to a first critical field value for the superconducting bridge;
- a control line;
- and
- a magnetic field signal emitted from the control line, the magnetic field signal having a signal strength Hsig at the superconducting bridge, wherein the emitted magnetic field signal breaks at least a portion of the Cooper pairs in the superconducting bridge into forced parallel spins.
A superconducting Meissner effect transistor comprising:
- a superconducting bridge between a first and a second current probe, the first and second current probe being electrically connected to a source and a drain electrical connection, respectively;
- and
- a control line configured to emit a magnetic field signal having signal strength Hsig at the superconducting bridge, wherein the emitted magnetic field is configured to break Cooper pairs in the superconducting bridge,
- wherein the superconducting bridge comprises niobium and/or niobium alloys and the frequency response of the transistor is between about 0.7 THz and about 1.25 THz.
Dependencies are inferred from the claim text.