Solar cell manufacturing method
AssigneeToshiba Mitsubishi-Electric Industrial Systems Corporation
InventorsTakahiro Hiramatsu, Hiroyuki Orita
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Abstract
In the present invention, a p-type silicon substrate is produced, a solution containing aluminum is misted, and the misted solution is sprayed onto the back surface of the p-type silicon substrate under non-vacuum to form a back surface passivation film made of the aluminum oxide film on the back surface of the p-type silicon substrate. Thereafter, a light irradiation processing in which an interface between the p-type silicon substrate and the back surface passivation film is irradiated with ultraviolet light is performed.
Claims9
A method for manufacturing a solar cell comprising the steps of:
- (a) producing a silicon substrate having a first main surface and a second main surface,
- (b) misting a solution containing a metal element,
- (c) spraying said misted solution onto the first main surface of said silicon substrate under non-vacuum to form a passivation film made of a metal oxide film on the first main surface of said silicon substrate,
- (d) producing a solar cell structure using said silicon substrate having said passivation film formed thereon, and
- (e) performing a light irradiation processing in which an interface between said passivation film and said first main surface of said silicon substrate is irradiated with a given light during fabrication of the solar cell, wherein
- said step (d) includes (d-1) a step of forming a first electrode and a second electrode on a first main surface side and a second main surface side of said silicon substrate, respectively,
- said step (d-1) includes a baking processing for baking at a given baking temperature,
- said step (e) is performed after said step (d), and
- said given light in said step (e) is one of:
- light whose photon energy is 1.1 eV or more,
- artificial solar light having an air mass of 1.5, and
- ultraviolet light having a wavelength of 365 nm.
Dependencies are inferred from the claim text.