Single electron transistor triggered by photovoltaic diode
AssigneeThe Charles Stark Draper Laboratory, Inc.
InventorsSteven J. Spector, Robin Mark Adrian Dawson, Michael G. Moebius, Benjamin F. Lane
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Abstract
A single photon detection circuit is described that includes a germanium photodiode that is configured with zero voltage bias to avoid dark current output when no photon input is present and also is configured to respond to a single photon input by generating a photovoltaic output voltage. A single electron bipolar avalanche transistor (SEBAT) has a base emitter junction connected in parallel with the germanium photodiode and is configured so that the photovoltaic output voltage triggers an avalanche collector current output.
Claims9
A single photon detection circuit comprising:
- a germanium photodiode configured with zero voltage bias to avoid dark current output when no photon input is present and configured to respond to a single photon input by generating a photovoltaic output voltage;
- and
- a single electron bipolar avalanche transistor (SEBAT) having a base, emitter and collector with a base emitter junction connected in parallel with the germanium photodiode and configured so that the photovoltaic output voltage triggers an avalanche collector current output.
Dependencies are inferred from the claim text.