Method of fabricating electrically isolated diamond nanowires and its application for nanowire MOSFET

A method for fabricating an electrically isolated diamond nanowire comprising:

• forming a diamond nanowire on a diamond substrate;
• depositing a dielectric or a polymer on the diamond nanowire and on the diamond substrate;
• planarizing the dielectric or the polymer;
• etching a portion of the planarized dielectric or polymer to expose a top portion of the diamond nanowire;
• depositing a metal layer to conformably cover the top portion of the diamond nanowire;
• and
• implanting ions into the diamond substrate below an intersection of the diamond nanowire and the diamond substrate;
• wherein the ions are implanted at an oblique angle from a side of the diamond nanowire;
• wherein the top portion of the diamond nanowire covered by the metal layer is not implanted with the ions;
• and
• wherein the ions implanted into the diamond substrate electrically isolate the diamond nanowire from the diamond substrate.