Wafer-scale synthesis of large-area black phosphorus material heterostructures

A wafer comprising:

• a substrate;
• a layer of crystalline black phosphorous material formed over a first area of the substrate;
• and
• a layer of dielectric material formed over the black phosphorous material in the first area, wherein a first interface between the black phosphorous material and the dielectric material extending for as much as one micron across the first area has fewer than 5 stacking faults in the black phosphorus material, wherein the first area comprises a single crystal grain and has a span across a surface of the substrate as large as 100 microns.

A wafer comprising:

• a substrate;
• a first layer of crystalline black phosphorous material formed over a first area of the substrate;
• a layer of first dielectric material formed over the black phosphorous material in the first area, wherein a first interface between the black phosphorous material and the first dielectric material extending for as much as one micron across the first area has fewer than 5 stacking faults in the black phosphorus material;
• and
• at least one additional layer of dielectric material or black phosphorous material formed over the first area to form a heterostructure stack of at least three layers.