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US 10,626,328 B2Granted
Nanocrystal, method of preparing the same, and optoelectronic device including the nanocrystal
AssigneeSamsung Electronics Co., Ltd.
InventorsSungjun Park, Weonkyu Koh, Yongnam Ham
Life of this patent
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Abstract
A substituted nanocrystal including a nanocrystal represented by Formula 1, wherein a portion of halogen atoms in an outermost region of the nanocrystal is substituted with a chloride anion, a polyatomic anion, or a combination thereof: AMX3 Formula 1 wherein, in Formula 1, A is cesium, rubidium, or an ammonium salt; M is germanium, tin, or lead; and X is iodine or bromine.
Claims20
An optoelectronic device comprising:
- a substituted nanocrystal comprising a nanocrystal represented by Formula 1, wherein a portion of halogen atoms in an outermost region of the nanocrystal is substituted with an anion, the anion comprising a chloride anion, a polyatomic anion, or a combination thereof
- AMX3 Formula 1
- wherein, in Formula 1,
- A is cesium, rubidium, or an ammonium salt;
- M is germanium, tin, or lead;
- and
- X is iodine or bromine, and
- wherein an amount of the anion is about 0.55 weight percent or less, based on a total weight of the substituted nanocrystal.
5 more elements
Dependencies are inferred from the claim text.