Flash memory with multiple control gates and flash memory array device made thereof

A flash memory having a plurality of control gates, comprising:

• a substrate;
• an oxide layer disposed on the substrate;
• a fin channel layer disposed on the oxide layer, comprising a first end portion, a second end portion, a top surface and two side surfaces, wherein the top surface and the two side surfaces are located between the first end portion and the second end portion, and the top surface faces away from the oxide layer and separates the two side surfaces;
• two charge storage structures disposed on the two side surfaces of the fin channel layer;
• two gate electrodes disposed on the oxide layer and respectively contacting with the two charge storage structures;
• two word conductive pillars connected to the two gate electrodes respectively and extending from the two gate electrodes in a direction leaving the oxide layer;
• and
• two word lines respectively connected to the two word conductive pillars, wherein an orthographic projection of the two word lines on the substrate intersects with an orthographic projection of the fin channel layer on the substrate.