Semiconductor structures and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Hung-Jui Kuo, Hui-Jung Tsai, Tsao-Lun Chang
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Abstract
Semiconductor structures and methods of forming the same are disclosed. The semiconductor structure includes a first die, a second die, a first encapsulating material and a protection layer. The first die includes a first substrate. The second die is bonded to the first die and includes a second substrate. The first encapsulating material encapsulates the first die. The protection layer is disposed on a sidewall of the first substrate and between the first substrate and the first encapsulating material, wherein a material of the protection layer is different from materials of the second substrate and the first encapsulating material.
Claims20
A method of forming a semiconductor structure, comprising:
- providing a first substrate comprising a first pad, the first pad comprising a depression;
- forming a protection layer to cover an exposed surface of the first substrate;
- providing a second substrate comprising a second pad and a bump electrically connected to the second pad, wherein a material of the protection layer is different from a material of the second substrate;
- bonding the first substrate and the second substrate by inserting the bump into the depression to electrically connect to the first pad;
- and
- thinning the second substrate by an etching process while the first substrate is protected by the protection layer.
A method of forming a semiconductor structure, comprising:
- providing a first die, wherein the first die comprises a first substrate;
- forming a protection layer on an exposed surface of the first substrate;
- providing a wafer, wherein the wafer comprises a second substrate and a plurality of die areas, wherein a material of the protection layer is different from a material of the second substrate;
- bonding the first die to one of the plurality of die areas of the wafer to form a bonded structure;
- thinning the second substrate by an etching process while the first substrate is protected by the protection layer;
- dicing the bonded structure to form a bonded unit, wherein the bonded unit comprises the first die and a second die diced from one of the plurality of die areas of the wafer;
- placing the bonded unit onto a carrier;
- forming an encapsulating material to encapsulate the bonded unit;
- performing a planarization process on the encapsulating material and the bonded unit;
- and
- debonding the bonded unit from the carrier.
A method of forming a semiconductor structure, comprising:
- bonding a first die and a second die, the first die comprising a first substrate, and the second die comprising a second substrate;
- forming a protection layer on a sidewall of the first substrate;
- encapsulating the first die and the protection layer by a first encapsulating material, wherein a material of the protection layer is different from materials of the second substrate and the first encapsulating material;
- and
- thinning the second substrate while the first substrate is protected by the protection layer and the first encapsulating material.
Dependencies are inferred from the claim text.