Flip chip backside die grounding techniques

A method of forming a semiconductor device, comprising:

• providing an integrated circuit attached to a chip carrier,
• the chip carrier including a substrate lead located at a front surface of the chip carrier;
• a component attached to the front surface of the chip carrier;
• an electrically insulating material disposed on the component;
• the integrated circuit comprises:
• a substrate including semiconductor material, the semiconductor material extending to a back surface of the integrated circuit;
• an interconnect region on the substrate, the interconnect region extending to a front surface of the integrated circuit;
• at least one of an NMOS transistor located within the integrated circuit or a PMOS transistor located within the integrated circuit;
• and
• a substrate bond pad located at the front surface of the integrated circuit;
• the front surface of the integrated circuit facing the front surface of the chip carrier;
• the substrate bond pad electrically coupled through the interconnect region to the semiconductor material;
• the substrate bond pad electrically coupled to the substrate lead;
• and
• forming an electrically conductive conformal layer disposed on the back surface of the integrated circuit, extending onto the substrate lead of the chip carrier, and extending at least partway over the electrically insulating material disposed on the component, the electrically conductive conformal layer making electrical contact with the semiconductor material in the substrate by making contact with the substrate lead.