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US 10,607,806 B2Granted
Silicon electron emitter designs
AssigneeKLA-Tencor Corporation
InventorsFrances Hill, Gildardo R. Delgado, Rudy F. Garcia, Michael E. Romero, Katerina Ioakeimidi
Life of this patent
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Abstract
Electron source designs are disclosed. The emitter structure, which may be silicon, has a layer on it. The layer may be graphene or a photoemissive material, such as an alkali halide. An additional layer between the emitter structure and the layer or a protective layer on the layer can be included. Methods of operation and methods of manufacturing also are disclosed.
Claims16
An electron source comprising:
- an emitter structure that includes silicon;
- a layer disposed on an outer surface of the emitter structure, wherein the layer includes or a photoemissive material, wherein the photoemissive material is an alkali halide, and wherein the alkali halide includes CsI, CsBr, or CsTe.
A method comprising:
- emitting electrons from an electron source comprising an emitter structure that includes silicon and a layer disposed on an outer surface of the emitter structure, wherein the layer includes a photoemissive material, wherein the photoemissive material is an alkali halide, and wherein the alkali halide includes CsI, CsBr, or CsTe.
A method of forming an electron source comprising:
- etching an emitter structure from a silicon source;
- and
- depositing a layer on an outer surface of the emitter structure, wherein the layer includes a photoemissive material, wherein the photoemissive material is an alkali halide, and wherein the alkali halide includes CsI, CsBr, or CsTe.
Dependencies are inferred from the claim text.