Dual wavelength hybrid device

A semiconductor device comprising:

• an n-type ohmic contact layer formed above a substrate;
• a cathode terminal electrode formed on a first section of the n-type ohmic contact layer;
• a first ion implant region formed in a first region of the n-type ohmic contact layer;
• a second ion implant region formed on the first ion implant region;
• a p-type modulation doped quantum well (QW) structure formed above the n-type ohmic contact layer;
• a third ion implant region formed on the second ion implant region, and that encompasses the p-type modulation doped QW structure;
• a first injector terminal electrode formed on the third ion implant region;
• an n-type modulation doped QW structure formed above the p-type modulation doped QW structure;
• a fourth ion implant region formed in a first region of the n-type modulation doped QW structure;
• a second injector terminal electrode formed on the fourth ion implant region, and in direct contact with the fourth ion implant region;
• a first plurality of layers formed above the n-type modulation doped QW structure;
• fifth and sixth ion implant regions formed in a depth within the first plurality of layers;
• a p-type ohmic contact layer formed above the n-type modulation doped QW structure;
• and
• a split anode terminal electrode having first and second parts that are formed on first and second sections of the p-type ohmic contact layer, respectively, wherein the first and second parts are separated by a trench that is formed between the first and second parts, wherein the second injector terminal electrode is in the trench such that the second injector terminal electrode is between the first and second parts, and wherein the semiconductor device is configured to operate in at least one of a vertical cavity mode and a whispering gallery mode.