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US 10,594,497 B2Granted
Semiconductor device
AssigneeRenesas Electronics Corporation
InventorHiromichi Takaoka
Life of this patent
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Abstract
A semiconductor device includes a first field effect transistor and a second field effect transistor which are respectively coupled to gate electrodes. An insulation property of a gate insulating film of the first field effect transistor is broken down. A resistance value of the gate insulating film of the second field effect transistor is greater than a resistance value of the gate insulating film of the first field effect transistor.
Claims15
A semiconductor device comprising:
- a first field effect transistor;
- and
- a second field effect transistor,
- wherein the first field effect transistor includes:
- a first source region formed in a semiconductor substrate,
- a first drain region formed in the semiconductor substrate,
- a first channel region sandwiched between the first source region and the first drain region,
- a first gate insulating film formed on the first channel region, and
- a first gate electrode formed on the first gate insulating film,
- wherein the second field effect transistor includes:
- a second source region formed in the semiconductor substrate,
- a second drain region formed in the semiconductor substrate,
- a second channel region sandwiched between the second source region and the second drain region,
- a second gate insulating film formed on the second channel region, and
- a second gate electrode formed on the second gate insulating film,
- wherein the first gate electrode and the second gate electrode are electrically coupled to each other,
- wherein the first source region and the first drain region are electrically coupled to each other,
- wherein the second source region and the second drain region are electrically coupled to each other,
- wherein an insulation property of the first gate insulating film is broken down, and
- wherein a resistance value of the second gate insulating film is greater than a resistance value of the first gate insulating film.
17 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a first gate insulating film formed on the semiconductor substrate;
- a first gate electrode formed on the first gate insulating film;
- a first sidewall spacer formed on a first sidewall of the first gate electrode;
- a second sidewall spacer formed on a second sidewall of the first gate electrode;
- a second gate insulating film formed on the semiconductor substrate and arranged apart from the first gate insulating film;
- a second gate electrode formed on the second gate insulating film;
- a third sidewall spacer formed on a third sidewall of the second gate electrode;
- a fourth sidewall spacer formed on a fourth sidewall of the second gate electrode;
- a first semiconductor region formed in the semiconductor substrate and formed outside the first sidewall spacer;
- and
- a second semiconductor region formed in the semiconductor substrate and formed outside the fourth sidewall spacer,
- wherein the first gate electrode and the second gate electrode are electrically coupled to each other,
- wherein the second sidewall spacer and the third sidewall spacer are coupled,
- wherein an insulation property of the first gate insulating film is broken down, and
- wherein a resistance value of the second gate insulating film is greater than a resistance value of the first gate insulating film.
13 more elements
Dependencies are inferred from the claim text.