Adaptive modulation scheme of MOSFET driver key parameters for improved voltage regulator efficiency and system reliability

A method comprising:

• providing, by a peak voltage detection circuit of a power stage of a voltage regulator, a voltage stress level based on a high side output voltage of a high side switch of the power stage;
• determining, by a high side driver strength modulator circuit of the power stage, a high side driver strength level for a set of high side gate drivers of the power stage based on a load current level of the power stage and the voltage stress level;
• connecting a subset of the set of high side gate drivers to a high side gate of the high side switch based on the high side driver strength level;
• disconnecting a remaining subset of the set of high side gate drivers from the high side gate;
• and
• adjusting, by a dead-time management circuit, a programmable portion of a dead-time duration for the set of high side gate drivers and a set of low side gate drivers, wherein the dead-time duration includes the programmable portion of the dead-time duration and a dynamic portion of the dead-time duration proportional to a change in temperature of the power stage when the power stage is in an operating temperature region, and wherein adjusting the programmable portion of the dead-time duration for the set of high side gate drivers and the set of low side gate drivers comprises:
• determining when a current temperature of the power stage is less than or equal to a low temperature region threshold;
• in response to determining that the current temperature is less than or equal to the low temperature region threshold, adjusting the programmable portion of the dead-time duration for the set of high side gate drivers and the set of low side gate drivers to a low temperature duration value;
• determining when the current temperature of the power stage is greater than or equal to a high temperature region threshold;
• and
• in response to determining that the current temperature is greater than or equal to the high temperature region threshold, adjusting the programmable portion of the dead-time duration for the set of high side gate drivers and the set of low side gate drivers to a high temperature duration value.