Gallium nitride power amplifier

A gallium nitride (GaN) power amplifier (PA) comprising a plurality of amplifier stages integrated into a monolithic integrated circuit and coupled together between a radio frequency signal input and a radio frequency signal output, wherein at least one of the plurality of amplifier stages includes a first GaN transistor that is configured to have a first breakdown voltage that is no more than 75% of a second breakdown voltage of a second GaN transistor included in a different one of the plurality of amplifier stages;

• wherein the first GaN transistor has a first drain, a first gate, and a first source with lateral spacing between one another and the second GaN transistor has a second drain, a second gate, and a second source with lateral spacing between one another such that the lateral spacing between at least one of the first drain, the first gate, and the first source is different from the lateral spacing between at least one of the second drain, the second gate, and the second source.