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US 10,594,271 B2Granted
Semiconductor device and power amplifier module
AssigneeMurata Manufacturing Co., Ltd.
InventorsIsao Obu, Yasunari Umemoto, Masahiro Shibata, Kenichi Nagura
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Abstract
A circuit element is formed on a substrate made of a compound semiconductor. A bonding pad is disposed on the circuit element so as to at least partially overlap the circuit element. The bonding pad includes a first metal film and a second metal film formed on the first metal film. A metal material of the second metal film has a higher Young's modulus than a metal material of the first metal film.
Claims20
A semiconductor device comprising:
- a circuit element formed on a substrate made of a compound semiconductor;
- and
- a bonding pad disposed on the circuit element so as to at least partially overlap the circuit element,
- wherein the bonding pad includes a first metal film and a second metal film formed on the first metal film,
- a metal material of the second metal film has a higher Young's modulus than a metal material of the first metal film,
- the second metal film includes two layers made of different metal materials,
- the bonding pad includes a third metal film formed on the second metal film, and
- the third metal film is formed of the same metal material as the first metal film.
5 more elements
A power amplifier module comprising:
- a semiconductor device including
- a power amplifier circuit that includes a heterojunction bipolar transistor formed on a substrate made of a compound semiconductor,
- a protection circuit connected between an emitter and a collector of the heterojunction bipolar transistor, and
- a bonding pad functioning as an output terminal of the power amplifier circuit;
- a printed circuit board on which the semiconductor device is mounted;
- and
- a bonding wire that is bonded to the bonding pad to connect the bonding pad to a wiring line of the printed circuit board,
- wherein
- at least one circuit element that forms the power amplifier circuit, the protection circuit and the bonding pad are disposed so as to partially overlap, the bonding pad includes at least two layers of a first metal film and a second metal film, and a metal material of the second metal film has a higher Young's modulus than a metal material of the first metal film,
- the second metal film includes two layers made of different metal materials,
- the bonding pad includes a third metal film formed on the second metal film, and
- the third metal film is formed of the same metal material as the first metal film.
9 more elements
A semiconductor device comprising:
- a circuit element formed on a substrate made of a compound semiconductor;
- and
- a bonding pad disposed on the circuit element so as to at least partially overlap the circuit element,
- wherein
- the bonding pad includes a first metal film and a second metal film formed on the first metal film,
- a metal material of the second metal film has a higher Young's modulus than a metal material of the first metal film,
- a thickness of the second metal film is equal to or larger than a thickness of the first metal film, and
- the bonding pad includes a third metal film formed on the second metal film, and the third metal film is formed of the same metal material as the first metal film.
5 more elements
Dependencies are inferred from the claim text.