Vertical cavity surface emitting laser, method for fabricating vertical cavity surface emitting laser

A method for fabricating a vertical cavity surface emitting laser comprising:

• preparing a substrate including III-V compound semiconductor containing gallium and arsenic as constituent elements;
• growing a semiconductor laminate for a lower Bragg distributed reflector on a principal surface of the substrate at a substrate temperature of 670 degrees Celsius or more;
• supplying a raw material containing organometallic material to a growth reactor to grow a first semiconductor layer on the semiconductor laminate at a substrate temperature of 590 degrees Celsius or less, the first semiconductor layer containing aluminum as a group-III constituent element and not containing indium as a group-III constituent element;
• and
• supplying a raw material containing organometallic material to a growth reactor to grow a second semiconductor layer for an active layer on the first semiconductor layer at a substrate temperature of 590 degrees Celsius or less, the second semiconductor layer containing indium as a group-III constituent element.