Quantum dot light emitting devices (QLEDs) and method of manufacture
AssigneeUniversity of Central Florida Research Foundation, Inc.
InventorsYajie Dong, Hao Chen, Shin-Tson Wu, Juan He
Life of this patent
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Abstract
An ultrabright bright quantum dot light-emitting diode (QLED) device and associated method of manufacture. The QLED device includes quantum dots (QD) as emitters and a mixture of metal oxide nanoparticles and alkali metal compounds for simultaneous electron injection and hole blocking to achieve charging balance at high driving current conditions. The ultrabright QLEDs are useful for many light source applications including, but not limited to display, solid state lighting, optical sensor, phototherapy, photomedicine and photobiomedicine.
Claims24
A quantum dot light-emitting diode (QLED) comprising:
- a quantum dot (QD) light-emitting layer comprising a plurality of quantum dots (QDs);
- and
- an electron injection and hole blocking layer positioned adjacent to the QD light-emitting layer, the electron injection and hole blocking layer comprising a mixture of a plurality of metal oxide nanoparticles and an alkali metal compound, wherein the QD light-emitting layer is simultaneously in contact with one or more of the metal oxide nanoparticles of the electron injection and hole blocking layer and with the alkali metal compound of the electron injection and hole blocking layer.
A flexible quantum dot light-emitting diode (QLED) device for performing photomedicine, the QLED device comprising:
- at least one quantum dot light-emitting diode (QLED), the at least one QLED comprising;
- a flexible substrate;
- a barrier layer adjacent to the flexible substrate;
- a cathode layer adjacent to the substrate;
- an electron injection and hole blocking layer comprising a mixture of a plurality of metal oxide nanoparticles and an alkali metal compound, wherein the electron injection and hole blocking layer is adjacent to the QD light-emitting layer;
- a quantum dot light-emitting diode (QLED) layer comprising a plurality of quantum dots (QDs);
- a hole transport layer adjacent to the QD light-emitting layer;
- a hole injection layer adjacent to the hole transport layer;
- and
- an anode layer adjacent to the hole injection layer.
A method of fabricating a quantum dot light-emitting diode (QLED) device, the method comprising:
- fabricating a cathode layer on a substrate;
- fabricating an electron injection and hole blocking layer comprising a mixture of a plurality of metal oxide nanoparticles and an alkali metal compound onto the cathode layer;
- fabricating a quantum dot (QD) light-emitting diode layer comprising a plurality of quantum dots (QDs) on the electron injection and hole blocking layer;
- fabricating a hole transport layer on the QD light emitting layer;
- fabricating a hole injection layer on the hole transport layer;
- and
- fabricating an anode layer on the hole injection layer.
A method for performing photomedicine, the method comprising:
- providing at least one quantum dot light-emitting diode (QLED) device, wherein the at least one QLED device comprises;
- a quantum dot light-emitting layer comprising a plurality of quantum dots (QDs);
- and
- an electron injection and hole blocking layer positioned adjacent to the QD light-emitting layer, the electron injection and hole blocking layer comprising a mixture of a plurality of metal oxide nanoparticles and an alkali metal compound, wherein the QD light-emitting layer is simultaneously in contact with one or more of the metal oxide nanoparticles of the electron injection and hole blocking layer and with the alkali metal compound of the electron injection and hole blocking layer.
Dependencies are inferred from the claim text.