Method for the manufacture of a correlated electron material device
AssigneeArm Limited
InventorsCarlos Alberto Paz de Araujo, Jolanta Bozena Celinska, Lucian Shifren
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Abstract
Disclosed is a method for the manufacture of a CEM device comprising forming a thin film of a correlated electron material having a predetermined electrical impedance when the CEM device in its relatively conductive (low impedance) state, wherein the forming of the CEM thin film comprises forming a d- or f-block metal or metal compound doped by a physical or chemical vapour deposition with a predetermined amount of a dopant comprising a back-donating ligand for the metal.
Claims20
A method for the manufacture of a correlated electron material (CEM) device comprising:
- forming a CEM thin film of a CEM of a predetermined leakage current density while the CEM device is in a relatively insulative and/or high impedance state, wherein the forming of the CEM thin film comprises forming a d- or f-block metal or metal compound, or a combination thereof, by a physical or chemical vapour deposition with a selected cross sectional area and an amount of a dopant comprising a back-donating ligand for the metal to impart a selected electrical impedance, and wherein the selected cross-sectional area and the selected electrical impedance are selected to provide a hole leakage current density less than or equal to 500 A/cm2.
A correlated electron material (CEM) device comprising:
- a CEM thin film of a CEM to have a predetermined leakage current density while the CEM device is in a relatively insulative state, wherein the CEM thin film to comprise a d- or f-block metal or metal compound, or combination thereof, doped with an amount of a back-donating ligand for the metal to impart a selected electrical impedance, and wherein the CEM thin film to have a selected cross-sectional area and a selected electrical impedance selected to provide a hole leakage current density less than or equal to 500 A/cm2.
Dependencies are inferred from the claim text.