Electronic device and method for fabricating the same
AssigneeSK hynix Inc.
InventorKyoung Su Choi
Life of this patent
Estimating the term…
Abstract
An electronic device includes a semiconductor memory, wherein the semiconductor memory comprises a plurality of memory stacks neighboring each other in a first direction and a second direction, the second direction intersecting the first direction, a plurality of first liner layers covering sidewalls of memory stacks that neighbor each other in the second direction, the plurality of first liner layers extending in the second direction, a plurality of first air gaps located in spaces covered by the first liner layers, and a plurality of second air gaps located between each pair of memory stacks that neighbor each other in the first direction, the plurality of second air gaps extending in the second direction.
Claims18
A method of fabricating an electronic device including a semiconductor memory, the method comprising:
- forming a stacked structure;
- forming a plurality of first trenches that pass through the stacked structure and that extend in a first direction;
- forming a plurality of first liner layers on inner walls of the first trenches;
- forming a plurality of sacrificial patterns in the first trenches;
- forming a plurality of second trenches that partially pass through the stacked structure and that extend in a second direction intersecting the first direction;
- forming a plurality of second liner layers on inner walls of the second trenches;
- forming memory stacks neighboring each other in the first direction and the second direction by extending the second trenches downwards after the second liner layers are formed;
- and
- forming first air gaps in the second liner layers by removing the sacrificial patterns through the second trenches.
A method of fabricating an electronic device, the method comprising:
- forming a stacked structure;
- forming first trenches that pass through the stacked structure;
- forming sacrificial patterns in the first trenches;
- forming second trenches that partially pass through the stacked structure and intersect the first trenches;
- forming liner layers on inner walls of the second trenches;
- etching the stacked structure using the liner layers as an etch barrier;
- and
- forming first air gaps in the liner layers by removing the sacrificial patterns through the second trenches.
Dependencies are inferred from the claim text.