Method of manufacturing semiconductor memory device
AssigneeToshiba Memory Corporation
InventorsYasuyuki Sonoda, Bo Kyoung Jung
Life of this patent
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Abstract
According to one embodiment, an insulating layer is formed on a substrate. A hole is formed in the insulating layer. A metal layer is formed in the hole to fill the hole. A surface of the insulating layer and a surface of the metal layer is removed by etching with ion beams having a first angle, which etches both the insulating layer and the metal layer at a first etching rate. A resistance change element is formed on the metal layer.
Claims6
A method of manufacturing a semiconductor memory device, the method comprising:
- forming an insulating layer on a substrate;
- forming a hole in the insulating layer;
- forming a metal layer in the hole to fill the hole;
- removing a surface of the insulating layer and a surface of the metal layer by etching with ion beams having a first angle, both the insulating layer and the metal layer being etched at a first etching rate with the ion beams of the first angle;
- and
- forming a resistance change element on the metal layer,
- wherein the removing of the surface of the insulating layer and the surface of the metal layer forms a coplanar surface over the insulating layer and the metal layer in the hole.
A method of manufacturing a semiconductor memory device, the method comprising:
- forming an insulating layer on a substrate;
- forming a hole in the insulating layer;
- forming a metal layer in the hole to fill the hole;
- removing a surface of the insulating layer and a surface of the metal layer by etching with ion beams having a first angle, both the insulating layer and the metal layer being etched at a first etching rate with the ion beams of the first angle;
- and
- forming a resistance change element on the metal layer,
- wherein the removing of the surface of the metal layer includes removing an oxide of a metal on a top surface of the metal layer in the hole.
A method of manufacturing a semiconductor memory device, the method comprising:
- forming an insulating layer on a substrate;
- forming a hole in the insulating layer;
- forming a metal layer in the hole to fill the hole;
- removing a part of the metal layer on the insulating layer;
- removing a surface of the insulating layer and a surface of the metal layer by etching with ion beams having a first angle after the removing of the part of the metal layer on the insulating layer, wherein both the insulating layer and the metal layer are etched at a first etching rate with the ion beams of the first angle, and wherein the removing of the surface of the metal layer includes removing an oxide of a metal on a top surface of the metal layer in the hole;
- and
- forming a resistance change element on the metal layer.
Dependencies are inferred from the claim text.