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US 10,593,868 B2Granted
Spin current magnetization rotating element, magnetoresistive effect element and magnetic memory
AssigneeTDK Corporation
InventorsYohei Shiokawa, Tomoyuki Sasaki
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Abstract
A spin current magnetization rotating element of the present disclosure includes a first ferromagnetic metal layer and a spin-orbit torque wiring, in which the spin-orbit torque wiring has a structure in which spin conduction layers and interface spin generation layers are alternately laminated, and one of the spin conduction layers is in closest proximity to the first ferromagnetic metal layer.
Claims19
A spin current magnetization rotating element comprising:
- a first ferromagnetic metal layer in which a magnetization direction changes;
- and
- a spin-orbit torque wiring extending in a second direction intersecting a first direction which is a direction perpendicular to a surface of the first ferromagnetic metal layer and having one surface on which the first ferromagnetic metal layer is positioned, wherein
- the spin-orbit torque wiring has a structure in which a spin conduction layer and an interface spin generation layer are alternately laminated in the first direction, and
- one of the spin conduction layers in the spin-orbit torque wiring is in closest proximity to the first ferromagnetic metal layer.
2 more elements
Dependencies are inferred from the claim text.