Back to results
US 10,593,866 B2Granted
Magnetic field assisted MRAM structures, integrated circuits, and methods for fabricating the same
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsChenchen Jacob Wang, Michael Nicolas Albert Tran, Dimitri Houssameddine, Eng Huat Toh
Life of this patent
Estimating the term…
Abstract
Magnetic field assisted magnetoresistive random access memory (MRAM) structures, integrated circuits including MRAM structures, and methods for fabricating integrated circuits including MRAM structures are provided. An exemplary integrated circuit includes a magnetoresistive random access memory (MRAM) structure and a magnetic field assist structure to generate a selected net magnetic field on the MRAM structure.
Claims15
An integrated circuit device comprising:
- a magnetoresistive random access memory (MRAM) structure, the MRAM structure including a top electrode with an upper surface, a first sidewall, and a second sidewall opposite to the first sidewall;
- a conductive contact coupled directly to the upper surface of the top electrode;
- a first capping layer directly on the first sidewall of the MRAM structure;
- a second capping layer directly on the second sidewall of the MRAM structure;
- and
- a magnetic structure to generate a selected net magnetic field on the MRAM structure, the magnetic structure including a first structure segment adjacent to the first sidewall and a second structure segment adjacent to the second sidewall, the first structure segment directly on the first capping layer, and the second structure segment directly on the second capping layer.
3 more elements
A magnetoresistive random access memory (MRAM) structure comprising:
- a magnetic tunnel junction stack having a first sidewall and a second sidewall opposite to the first sidewall, and the magnetic tunnel junction stack including a magnetic pinned layer, a magnetic free layer, and a barrier layer disposed between the magnetic pinned layer and the magnetic free layer;
- and
- a first capping layer directly on the first sidewall;
- a second passivation capping layer directly on the second sidewall;
- a conductive contact directly coupled to an upper surface of the magnetic tunnel junction stack;
- a magnetic structure to generate a selected net magnetic field on the magnetic free layer, the magnetic structure including a first segment directly on the first capping layer and a second segment directly on the second capping layer;
- and
- a dielectric layer overlying the magnetic structure, the first segment of the magnetic structure completely surrounded by the first capping layer, the conductive contact, and the dielectric layer, and the second segment completely surrounded by the second capping layer, the conductive contact, and the dielectric layer.
5 more elements
Dependencies are inferred from the claim text.