Magnetoresistive random access memory with particular conductive plug and method of manufacturing the same

A magnetoresistive random access memory, comprising:

• a substrate;
• a conductive plug in said substrate, wherein said conductive plug has a flat top surface, a protruding portion extending outwardly and horizontally beyond a sidewall of said conductive plug on one side and overlapping said flat top surface and a notched portion concaving inwardly on the other side of the upper edge of said conductive plug, wherein said protruding portion comprises a bottom level connecting with said flat top surface and said sidewall of said conductive plug and having a slope different from a slope of said sidewall of said conductive plug;
• and
• a magnetic memory cell with a bottom electrode electrically connecting with said conductive plug, a magnetic tunnel junction on said bottom electrode and a top electrode on said magnetic tunnel junction, wherein the bottom surface of said magnetic memory cell and said flat top surface of said conductive plug directly contact and completely overlap each other, and said magnetic memory cell completely overlaps said protruding portion of said conductive plug, and wherein a center line of said magnetic memory cell is offset to a center line of said conductive plug.