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US 10,593,834 B2Granted
Micro light emitting device and display apparatus
AssigneePlayNitride Inc.
InventorsChih-Ling Wu, Yi-Min Su
Life of this patent
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Abstract
A micro light emitting device includes an epitaxial structure, a first type electrode, and a second type electrode. The epitaxial structure has a first accommodating cavity. The first type electrode is disposed on the first accommodating cavity of the epitaxial structure and has a second accommodating cavity. The second type electrode is disposed on the epitaxial structure, wherein the epitaxial structure is located between the first type electrode and the second type electrode.
Claims16
A micro light emitting device, comprising:
- an epitaxial structure having a first accommodating cavity, wherein the first accommodating cavity has a first depth, and a ratio of the first depth to a maximum height of the epitaxial structure is greater than 0 and less than or equal to 0.5;
- a first type electrode disposed on the first accommodating cavity of the epitaxial structure and having a second accommodating cavity;
- and
- a second type electrode disposed on the epitaxial structure, wherein the epitaxial structure is located between the first type electrode and the second type electrode, wherein the epitaxial structure comprises a first type semiconductor layer, a light emitting layer and a second type semiconductor layer, the light emitting layer is disposed between the first type semiconductor layer and the second type semiconductor layer, and a width of the first type semiconductor layer is greater than or equal to a width of the second type semiconductor layer, wherein the first type semiconductor layer has the first accommodating cavity.
1 more element
A display apparatus, comprising:
- a driving substrate;
- a plurality of bonding pads dispersedly disposed on the driving substrate;
- and
- a plurality of micro light emitting devices dispersedly disposed on the driving substrate and corresponding to the plurality of bonding pads respectively, wherein each of the plurality of micro light emitting devices comprises:
- an epitaxial structure having a first accommodating cavity, wherein the first accommodating cavity and the driving substrate define a space, and the first accommodating cavity has a first depth, and a ratio of the first depth to a maximum height of the epitaxial structure is greater than 0 and less than or equal to 0.5;
- a first type electrode disposed on the first accommodating cavity of the epitaxial structure and located in the space, wherein the first type electrode is electrically connected to a corresponding bonding pad among the plurality of bonding pads;
- and
- a second type electrode disposed on the epitaxial structure, wherein the epitaxial structure is located between the first type electrode and the second type electrode, wherein the epitaxial structure comprises a first type semiconductor layer, a light emitting layer and a second type semiconductor layer, the light emitting layer is disposed between the first type semiconductor layer and the second type semiconductor layer, and a width of the first type semiconductor layer is greater than or equal to a width of the second type semiconductor layer, wherein the first type semiconductor layer has the first accommodating cavity.
5 more elements
Dependencies are inferred from the claim text.