LED with internally confined current injection area

An LED device comprising:

• a micro p-n diode including:
• an active layer between a first doped layer and a second doped layer, wherein the first doped layer is doped with a first dopant type and the second doped layer is doped with a second dopant type opposite the first dopant type, and the active layer comprises a plurality of quantum well layers and a plurality of barrier layers;
• and
• laterally opposite exterior sidewalls extending from a topmost surface of the micro p-n diode to a bottommost surface of the micro p-n diode;
• wherein the micro p-n diode has a maximum dimension of 50 μm or less between the laterally opposite exterior sidewalls;
• a current injection region located within the active layer;
• and
• a modified confinement barrier region within the active layer and laterally surrounding the current injection region to confine current that flows through the active layer to an interior portion of the micro p-n diode and away from the sidewalls of the micro p-n diode, wherein the modified confinement barrier region comprises intermixed regions of the plurality of quantum well layers, the plurality of barrier layers, and an impurity concentration characterized by an impurity profile that extends through the second doped layer, the plurality of quantum well layers and the plurality of barrier layers;
• wherein the intermixed regions of the plurality of quantum well layers are characterized by a higher average aluminum concentration than the current injection region within the plurality of quantum well layers, and intermixed regions of the plurality of barrier layers are characterized by a lower average aluminum concentration than the current injection region within the plurality of barrier layers.