Infra-red devices
AssigneeCambridge Gan Devices Limited
InventorsFlorin Udrea, Andrea De Luca, Giorgia Longobardi
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Abstract
We disclose herewith a heterostructure-based infra-red (IR) device comprising a substrate comprising an etched portion and a substrate portion; a device region on the etched portion and the substrate portion, the device region comprising a membrane region which is an area over the etched portion of the substrate. At least one heterostructure-based element is formed at least partially within or on the membrane region and the heterostructure-based element comprises at least one two dimensional carrier gas.
Claims19
A heterostructure-based infra-red (IR) device comprising:
- a substrate comprising an etched portion and a substrate portion;
- a device region located on the etched portion and the substrate portion, the device region comprising a membrane region which is an area over the etched portion of the substrate;
- at least one heterostructure-based element located at least partially within or on the membrane region, the heterostructure-based element comprising at least one two dimensional carrier gas, a first III-nitride semiconductor layer having a first band gap, and a second III-nitride semiconductor layer having a second bandgap different from the first band gap disposed on the first III-nitride semiconductor layer, wherein the two dimensional carrier gas is formed between the first and second III-nitride semiconductor layers;
- and
- wherein the IR device is configured to operate as either an IR emitter or an IR detector.
A method of manufacturing a heterostructure-based IR device, the method comprising:
- forming a substrate comprising an etched portion and a substrate portion;
- forming a device region on the etched portion and the substrate portion, the device region comprising a membrane region which is an area over the etched portion of the substrate;
- and
- forming at least one heterostructure-based element at least partially within or on the membrane region, wherein the heterostructure-based element comprises at least one two dimensional carrier gas, a first III-nitride semiconductor layer having a first band gap, and a second III-nitride semiconductor layer having a second bandgap different from the first band gap disposed on the first III-nitride semiconductor layer, wherein the two dimensional carrier gas is formed between the first and second III-nitride semiconductor layers;
- and
- wherein the IR device operates as either an IR emitter or an IR detector.
Dependencies are inferred from the claim text.