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US 10,593,814 B2Granted
Semiconductor device having first and second electrode layers electrically disconnected from each other by a slit
AssigneeRohm Co., Ltd.
InventorHiroki Yamamoto
Life of this patent
Estimating the term…
Abstract
A chip part includes a substrate, an element formed on the substrate, and an electrode formed on the substrate. A recess and/or projection expressing information related to the element is formed at a peripheral edge portion of the substrate.
Claims14
A bidirectional Zener diode chip comprising:
- a first diffusion region of a second conductivity type formed on a semiconductor substrate of a first conductivity type, forming a p-n junction with the semiconductor substrate, and exposed on a principal surface of the semiconductor substrate,
- a second diffusion region of the second conductivity type formed on the semiconductor substrate while being spaced apart from the first diffusion region, forming a p-n junction with the semiconductor substrate, and exposed on a principal surface of the semiconductor substrate,
- a first electrode connected to the first diffusion region and formed on the principal surface of the semiconductor substrate, and
- a second electrode connected to the second diffusion region and being formed on the principal surface of the semiconductor substrate,
- wherein the first electrode plus the first diffusion region and the second electrode plus the second diffusion region are arranged to be mutually symmetrical,
- a plurality of the first diffusion regions and a plurality of the second diffusion regions are arrayed alternately along a predetermined arraying direction parallel to the principal surface of the semiconductor substrate, and
- the first electrode and the second electrode are made of one of AlSi and a laminated film comprising a Ti film, a TiN film, and an AlCu film.
4 more elements
A bidirectional Zener diode chip comprising:
- a first diffusion region of a second conductivity type formed on a semiconductor substrate of a first conductivity type, forming a p-n junction with the semiconductor substrate, and exposed on a principal surface of the semiconductor substrate,
- a second diffusion region of the second conductivity type formed on the semiconductor substrate while being spaced apart from the first diffusion region, forming a p-n junction with the semiconductor substrate, and exposed on a principal surface of the semiconductor substrate,
- a first electrode connected to the first diffusion region and formed on the principal surface of the semiconductor substrate, and
- a second electrode connected to the second diffusion region and being formed on the principal surface of the semiconductor substrate,
- wherein the first electrode plus the first diffusion region and the second electrode plus the second diffusion region are arranged to be mutually symmetrical, and
- respective peripheral lengths of the first diffusion regions and the second diffusion regions are not less than 400 μm.
3 more elements
A bidirectional Zener diode chip comprising:
- a first diffusion region of a second conductivity type formed on a semiconductor substrate of a first conductivity type, forming a p-n junction with the semiconductor substrate, and exposed on a principal surface of the semiconductor substrate,
- a second diffusion region of the second conductivity type formed on the semiconductor substrate while being spaced apart from the first diffusion region, forming a p-n junction with the semiconductor substrate, and exposed on a principal surface of the semiconductor substrate,
- a first electrode connected to the first diffusion region and formed on the principal surface of the semiconductor substrate, and
- a second electrode connected to the second diffusion region and being formed on the principal surface of the semiconductor substrate,
- wherein the first electrode plus the first diffusion region and the second electrode plus the second diffusion region are arranged to be mutually symmetrical, and
- the respective peripheral lengths of the first diffusion regions and the second diffusion regions are not more than 1500 μm.
3 more elements
A bidirectional Zener diode chip comprising:
- a first diffusion region of a second conductivity type formed on a semiconductor substrate of a first conductivity type, forming a p-n junction with the semiconductor substrate, and exposed on a principal surface of the semiconductor substrate,
- a second diffusion region of the second conductivity type formed on the semiconductor substrate while being spaced apart from the first diffusion region, forming a p-n junction with the semiconductor substrate, and exposed on a principal surface of the semiconductor substrate,
- a first electrode connected to the first diffusion region and formed on the principal surface of the semiconductor substrate,
- a second electrode connected to the second diffusion region and being formed on the principal surface of the semiconductor substrate, and
- an insulating film formed in contact with the principal surface of the semiconductor substrate, having a first contact hole at each bonding portion of the first electrode and the first diffusion region, and having a second contact hole at each bonding portion of the second electrode and the second diffusion region,
- wherein the first electrode plus the first diffusion region and the second electrode plus the second diffusion region are arranged to be mutually symmetrical,
- portions of the first electrode and the second electrode besides the respective bonding portions with the first diffusion regions and the second diffusion regions are formed on the insulating film, and
- the first electrode and the second electrode are made of one of AlSi and a laminated film comprising a Ti film, a TiN film, and an AlCu film.
5 more elements
A bidirectional Zener diode chip comprising:
- a first diffusion region of a second conductivity type formed on a semiconductor substrate of a first conductivity type, forming a p-n junction with the semiconductor substrate, and exposed on a principal surface of the semiconductor substrate,
- a second diffusion region of the second conductivity type formed on the semiconductor substrate while being spaced apart from the first diffusion region, forming a p-n junction with the semiconductor substrate, and exposed on a principal surface of the semiconductor substrate,
- a first electrode connected to the first diffusion region and formed on the principal surface of the semiconductor substrate,
- a second electrode connected to the second diffusion region and being formed on the principal surface of the semiconductor substrate, and
- a protective film formed on the principal surface of the semiconductor substrate so as to cover the first electrode and the second electrode while exposing the respective external connection portions of the first electrode and the second electrode,
- wherein the first electrode plus the first diffusion region and the second electrode plus the second diffusion region are arranged to be mutually symmetrical, and
- the first electrode and the second electrode are made of one of AlSi and a laminated film comprising a Ti film, a TiN film, and an AlCu film.
4 more elements
Dependencies are inferred from the claim text.