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US 10,593,808 B2Granted
Thin film transistor and display device including the same
AssigneeSamsung Display Co., Ltd.
InventorsJoonseok Park, Jihun Lim, Myounghwa Kim, Taesang Kim, Yeonkeon Moon
Life of this patent
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Abstract
A thin film transistor includes an active layer over a substrate, a gate electrode over the active layer, a gate line connected with the gate electrode, and a gate insulation film between the active layer and the gate electrode. The active layer includes a channel region overlapping the gate electrode, and a drain region and a source region on respective sides of the channel region. A length of a straight line connecting the drain region and the source region by a shortest distance may be greater than a width of the gate line parallel to the straight line.
Claims17
A thin film transistor, comprising:
- an active layer over a substrate;
- a gate electrode over the active layer;
- a gate line electrically connected with the gate electrode;
- and
- a gate insulation film between the active layer and the gate electrode,
- wherein the active layer includes a channel region overlapping the gate electrode and a drain region and a source region on respective sides of the channel region,
- wherein a length of a straight line connecting the drain region and the source region by a shortest distance is greater than a width of the gate line parallel to the straight line, and
- wherein:
- i) the gate electrode includes a plurality of trenches toward an inside of the gate electrode from an outer side surface of the gate electrode, or
- ii) the channel region includes at least one bent portion, and a length of the gate electrode, measured from the drain region to the source region, is greater than a length of the straight line.
7 more elements
A display device, comprising:
- a substrate;
- a thin film transistor on the substrate;
- and
- a display element on the substrate and electrically connected with the thin film transistor, wherein the thin film transistor includes:
- an active layer including a drain region and a source region on respective sides of a channel region;
- a gate electrode over the active layer and overlapping the channel region;
- a gate line through which an electrical signal is to be applied to the gate electrode;
- and
- a gate insulation film between the active layer and the gate electrode,
- wherein a length of a straight line connecting one end of the gate insulation film adjacent to the drain region and another end of the gate insulation film adjacent to the source region by a shortest distance is greater than a width of the gate line parallel to the straight line, and
- wherein:
- i) the gate electrode includes a plurality of trenches toward an inside of the gate electrode from an outer side surface of the gate electrode, or
- ii) the channel region includes at least one bent portion, and a length of the gate electrode, measured from the drain region to the source region, is greater than a length of the straight line.
10 more elements
A display device, comprising:
- a substrate;
- a thin film transistor on the substrate;
- and
- a display element on the substrate and electrically connected with the thin film transistor, wherein the thin film transistor includes:
- an active layer including a drain region and a source region on respective sides of a channel region;
- a gate electrode over the active layer and overlapping the channel region;
- a gate line through which an electrical signal is to be applied to the gate electrode;
- a gate insulation film between the active layer and the gate electrode;
- a buffer layer between the substrate and the thin film transistor;
- and
- a conductive layer between the substrate and the buffer layer,
- wherein the conductive layer overlaps the thin film transistor,
- wherein a length of a straight line connecting one end of the gate insulation film adjacent to the drain region and another end of the gate insulation film adjacent to the source region by a shortest distance is greater than a width of the gate line parallel to the straight line, and
- wherein the thin film transistor includes:
- a first insulation film covering the gate electrode, the gate line, the source region, and the drain region;
- a source electrode on the first insulation film and electrically connected with the source region;
- and
- a drain electrode on the first insulation film and electrically connected with the drain region, wherein the source electrode is electrically connected with the conductive layer.
15 more elements
Dependencies are inferred from the claim text.