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US 10,593,804 B2Granted
Non-planar semiconductor device having hybrid geometry-based active region
AssigneeIntel Corporation
InventorsSeiyon Kim, Rafael Rios, Fahmida Ferdousi, Kelin J. Kuhn
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Abstract
Non-planar semiconductor devices having hybrid geometry-based active regions are described. For example, a semiconductor device includes a hybrid channel region including a nanowire portion disposed above an omega-FET portion disposed above a fin-FET portion. A gate stack is disposed on exposed surfaces of the hybrid channel region. The gate stack includes a gate dielectric layer and a gate electrode disposed on the gate dielectric layer. Source and drain regions are disposed on either side of the hybrid channel region.
Claims6
A semiconductor device, comprising:
- a hybrid channel region comprising an omega FET portion disposed above and on a nanowire portion disposed above a fin-FET portion, the omega FET portion having a wider portion on a narrower portion, the narrower portion on the nanowire;
- a gate stack disposed on exposed surfaces of the hybrid channel region, the gate stack comprising a gate dielectric layer and a gate electrode disposed on the gate dielectric layer, the gate stack completely separating the nanowire portion from the fin-FET portion of the hybrid channel region;
- and
- source and drain regions disposed on either side of the hybrid channel region.
1 more element
Dependencies are inferred from the claim text.