Lateral insulated-gate bipolar transistor and method therefor

A lateral insulated-gate bipolar transistor comprising:

• a substrate of a first conductivity type;
• an epitaxial layer of the first conductivity type located at a top surface of the substrate;
• a first well region of the first conductivity type located within the epitaxial layer;
• a second well region of a second conductivity type located within the epitaxial layer adjacent to the first well region, the second conductivity type opposite of the first conductivity type;
• a source region of the second conductivity type located within the first well region, a portion of the first well region forming a channel region between the source region and the second well region;
• an emitter region of the first conductivity type located within the second well region and laterally spaced from the channel region, the second well region extends laterally from the emitter region to the channel region;
• a gate dielectric formed over the channel region;
• and
• a gate electrode formed on the gate dielectric, the gate electrode overlapping at least a portion of the second well region and the source region, wherein the first well region extends laterally surrounding side regions and a bottom region of the source region, and the lateral insulated-gate bipolar transistor is formed as a Darlington configuration.