Semiconductor device

A semiconductor device comprising:

• a first semiconductor region of a first conductive type;
• a base region of a second conductive type on the first semiconductor region;
• a plurality of gate electrodes penetrating through the base region to reach the first semiconductor region;
• a plurality of gate insulating films around the plurality of gate electrodes, respectively;
• a first region having a source region of the first conductive type, among a plurality of regions between the plurality of gate insulating films;
• a second region not having the source region among the plurality of regions, the second region being located in a terminal region of the first region;
• a first contact of a first width in the first region and electrically connecting the base region and a source electrode;
• a second contact of a second width larger than the first width, the second contact being in the second region and electrically connecting the base region and the source electrode;
• and
• a third contact of a third width larger than the first width, the third contact being in a terminal part in a direction in which the first contact extends, wherein the second contact in the second region is deeper than the first contact in the first region, and
• the third contact in the terminal part in the direction in which the first contact extends is deeper than the first contact in the first region.