Electrostatic doping-based all GNR tunnel field-effect transistor

An energy-efficient transistor model for power switch application comprising the following:

• a carrier path made of hydrogen-passivated armchair Graphene Nano-ribbon (GNR) heterojunction, which can be divided into three sections:
• a channel made of 3p dimmer armchair GNR (p is integer number greater than 3), a source and a drain made of same type 3p+2 dimmer armchair GNR, the value of p takes same value for channel, source and drain,
• two electrodes, made of the same material with the source and drain, connected to source and drain at the two ends, respectively,
• two doping gate at left/right sides of the device, sandwiching the source and drain part of the GNR path,
• one control gate in the middle of the device, sandwiching the channel part of the GNR path,
• the gates are made of two layers:
• copper in the top layer and diamond in the bottom layer,
• the doping gates at source and drain are applied with opposite voltages and the control gate is applied with a voltage range between −1.5V to +1.5V, where the device is functioning, the transistor can function as a power switch with a large on/off current ratio of 10{circumflex over ( )}15.