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US 10,593,777 B2Granted
Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorBeom-Yong Kim
Life of this patent
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Abstract
A semiconductor layer stack includes a first conductive layer, a dielectric layer including a high-k material, which is formed on the first conductive layer, a second conductive layer formed on the dielectric layer, and an interface control layer formed between the dielectric layer and the second conductive layer and including a leakage blocking material, a dopant material, a high bandgap material and a high work function material.
Claims20
A semiconductor layer stack comprising:
- a first conductive layer;
- a dielectric layer including a high-k material, which is formed on the first conductive layer;
- a second conductive layer formed on the dielectric layer;
- and
- an interface control layer formed between the dielectric layer and the second conductive layer, and including a sequential stack of a leakage blocking material, a dopant material and a high bandgap material,
- wherein the dopant material is formed between the dielectric layer and the second conductive layer,
- wherein the leakage blocking material is formed between the dopant material and the dielectric layer, and
- wherein the high bandgap material is formed between the dopant material and the second conductive layer.
5 more elements
Dependencies are inferred from the claim text.