Electronic device including a dielectric layer having a non-uniform thickness

An electronic device comprising:

• a drain region of a transistor;
• a source region of the transistor;
• a dielectric layer having a first portion and a second portion, wherein:
• the first portion has a first thickness and is closer to the drain region than to the source region;
• the second portion has a second thickness, is closer to the source region than to the drain region, and is spaced apart from the drain region;
• the first thickness is no greater than 90 nm and is greater than the second thickness;
• the first and second portions contact each other at a location spaced apart from the drain region;
• and
• the dielectric layer includes a gate dielectric of the transistor;
• and
• a gate electrode of the transistor overlies the first and second portions of the dielectric layer.

An electronic device comprising:

• a drain region of a transistor;
• a source region of the transistor;
• a dielectric layer having a first portion and a second portion, wherein:
• the first portion has a first thickness and is closer to the drain region than to the source region;
• the second portion has a second thickness and is closer to the source region than to the drain region;
• the first thickness is greater than the second thickness;
• and
• the dielectric layer includes a gate dielectric of the transistor;
• and
• a gate electrode of the transistor including a main body portion and a tail portion, wherein:
• the source region is closer to the main body portion than the tail portion,
• the main body portion overlies the first and second portions of the dielectric layer, and
• the tail portion overlies the first portion of the dielectric layer and is spaced apart from the second portion of the dielectric layer.