Vertical fin-type bipolar junction transistor with self-aligned base contact
AssigneeInternational Business Machines Corporation
InventorsChoonghyun Lee, Seyoung Kim, Injo Ok, Soon-Cheon Seo
Life of this patent
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Abstract
A bipolar junction transistor includes a collector having a first surface on a first level and a second surface on a second level. A base is formed on the second level of the collector, and an emitter is formed on the base. A dielectric liner is formed on vertical sidewalls of the collector, the base and the emitter and over the first surface. A conductive region is formed adjacent to the base in the dielectric liner. A base contact is formed along one of the vertical sidewalls to connect to the base through the conductive region.
Claims20
A bipolar junction transistor, comprising:
- a collector having a first surface on a first level and a second surface on a second level;
- a base formed on the second level of the collector;
- an emitter formed on the base;
- a dielectric liner formed on vertical sidewalls of the collector, the base and the emitter and over the first surface, wherein the dielectric liner includes germanium oxide;
- a conductive region formed adjacent to the base within the dielectric liner;
- and
- a base contact formed along one of the vertical sidewalls to connect to the base through the conductive region.
A bipolar junction transistor, comprising:
- a collector having a first surface on a first level and a second surface on a second level;
- a base formed on the second level of the collector;
- an emitter formed on the base;
- a metal doped dielectric liner formed on vertical sidewalls of the collector, the base and the emitter and over the first surface;
- a conductive region self-aligned to the base and formed through the dielectric liner corresponding to a position on the vertical sidewall of the base;
- a base contact formed along the vertical sidewall of the base to connect to the base through the conductive region;
- an emitter contact formed on the emitter;
- and
- a collector contact landing on the first level of the collector.
A bipolar junction transistor, comprising:
- a collector having a first surface on a first level and a second surface on a second level;
- a base formed on the second level of the collector;
- an emitter formed on the base;
- a dielectric liner formed on vertical sidewalls of the collector, the base and the emitter and over the first surface, wherein the dielectric liner includes a metal doped oxide;
- a conductive region formed adjacent to the base within the dielectric liner;
- and
- a base contact formed along one of the vertical sidewalls to connect to the base through the conductive region.
Dependencies are inferred from the claim text.